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|標題:||Rapid Thermal Annealing of ZnO Nanocrystalline Films for Dye-Sensitized Solar Cells||作者:||Kao, M.C.
|關鍵字:||ZnO;Rapid thermal annealing;Nanocrystalline;Dye-sensitized solar;cells;thin-films;deposition;transport||Project:||Journal of Superconductivity and Novel Magnetism||期刊/報告no：:||Journal of Superconductivity and Novel Magnetism, Volume 23, Issue 6, Page(s) 897-900.||摘要:||
Nanocrystalline ZnO thin films were prepared by the sol-gel method and annealed at 600 A degrees C by conventional (CTA) and rapid thermal annealing (RTA) processes on fluorine-doped tin oxide (FTO)-coated glass substrates for application as the work electrode for a dye-sensitized solar cell (DSSC). ZnO films were crystallized using a conventional furnace and the proposed RTA process at annealing rates of 5 A degrees C/min and 600 A degrees C/min, respectively. The ZnO thin films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM) analyses. Based on the results, the ZnO thin films crystallized by the RTA process presented better crystallization than films crystallized in a conventional furnace. The ZnO films crystallized by RTA showed higher porosity and surface area than those prepared by CTA. The results show that the short-circuit photocurrent (J (sc)) and open-circuit voltage (V (oc)) values increased from 4.38 mA/cm(2) and 0.55 V for the DSSC with the CTA-derived ZnO films to 5.88 mA/cm(2) and 0.61 V, respectively, for the DSSC containing the RTA-derived ZnO films.
|Appears in Collections:||光電工程研究所|
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