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|標題:||Effects of hydrogenated-amorphous-silicon layer on the performance of SiGe metal-semiconductor-metal photodetectors||作者:||Hwang, J.D.
|關鍵字:||schottky-barrier photodetectors;dark-current;cap layer;temperature||Project:||Journal of the Electrochemical Society||期刊/報告no：:||Journal of the Electrochemical Society, Volume 154, Issue 11, Page(s) J365-J368.||摘要:||
A thin (30 nm) hydrogenated-amorphous-silicon (a-Si:H) layer has been introduced to dramatically suppress the dark current of SiGe/Si metal-semiconductor-metal photodetectors (MSM-PDs) and enhance their photocurrent, around 850 nm wavelength. The effects of a-Si:H as a passivation and a Schottky-barrier-height (SBH) enhancement layer on reducing the dark current of SiGe/Si MSM-PDs have been studied in detail. It was found that the a-Si:H as a passivation layer could effectively suppress the dark current better than the a-Si:H as a SBH enhancement layer. Compared to uncapped samples, the samples with a-Si:H passivation layer could enhance the photo-to-dark-current ratio and responsivity by a magnitude of 1.39x10(6) and 21, respectively. The related mechanisms have been proposed in this paper. (c) 2007 The Electrochemical Society.
|Appears in Collections:||光電工程研究所|
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