Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39831
標題: Effects of hydrogenated-amorphous-silicon layer on the performance of SiGe metal-semiconductor-metal photodetectors
作者: Hwang, J.D.
貢中元
Chen, Y.H.
Kung, C.Y.
Liu, J.C.
關鍵字: schottky-barrier photodetectors;dark-current;cap layer;temperature
Project: Journal of the Electrochemical Society
期刊/報告no:: Journal of the Electrochemical Society, Volume 154, Issue 11, Page(s) J365-J368.
摘要: 
A thin (30 nm) hydrogenated-amorphous-silicon (a-Si:H) layer has been introduced to dramatically suppress the dark current of SiGe/Si metal-semiconductor-metal photodetectors (MSM-PDs) and enhance their photocurrent, around 850 nm wavelength. The effects of a-Si:H as a passivation and a Schottky-barrier-height (SBH) enhancement layer on reducing the dark current of SiGe/Si MSM-PDs have been studied in detail. It was found that the a-Si:H as a passivation layer could effectively suppress the dark current better than the a-Si:H as a SBH enhancement layer. Compared to uncapped samples, the samples with a-Si:H passivation layer could enhance the photo-to-dark-current ratio and responsivity by a magnitude of 1.39x10(6) and 21, respectively. The related mechanisms have been proposed in this paper. (c) 2007 The Electrochemical Society.
URI: http://hdl.handle.net/11455/39831
ISSN: 0013-4651
DOI: 10.1149/1.2778859
Appears in Collections:光電工程研究所

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