Please use this identifier to cite or link to this item:
標題: Liquid phase deposition silicon dioxide for surface passivation in SiGe metal-semiconductor-metal photodetectors
作者: Hwang, J.D.
Kung, C.Y.
Chen, Y.H.
Wei, C.S.
Chen, P.S.
關鍵字: metal-semiconductor-metal photodetectors;liquid phase deposition;SiGe;passivation;gesi strained layers;infrared detectors;buffer layers;oxidation;temperature;performance;insulator
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 515, Issue 7-8, Page(s) 4049-4052.
A low temperature (50 degrees C) thin oxide passivation layer has been employed to substantially suppress the dark current of SiGe planar metal-semiconductor-metal photodetectors (MSM-PDs). The low temperature oxide layer was prepared by using liquid phase deposition (LPD) process and deposited in regions between the interdigitated electrodes of MSM-PDs. A four time improvement in the dark current of the passivated SiGe device was achieved. The introduction of LPD-oxide passivation layer is believed to suppress surface states situated on SiGe surface and therefore reduce surface leakage. Additionally, such a thin oxide (15 nm) passivation layer did not affect the optical performance of passivated MSM-PDs. (c) 2006 Elsevier B.V. All rights reserved.
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2006.10.123
Appears in Collections:光電工程研究所

Show full item record

Google ScholarTM




Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.