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|標題:||Liquid phase deposition silicon dioxide for surface passivation in SiGe metal-semiconductor-metal photodetectors||作者:||Hwang, J.D.
|關鍵字:||metal-semiconductor-metal photodetectors;liquid phase deposition;SiGe;passivation;gesi strained layers;infrared detectors;buffer layers;oxidation;temperature;performance;insulator||Project:||Thin Solid Films||期刊/報告no：:||Thin Solid Films, Volume 515, Issue 7-8, Page(s) 4049-4052.||摘要:||
A low temperature (50 degrees C) thin oxide passivation layer has been employed to substantially suppress the dark current of SiGe planar metal-semiconductor-metal photodetectors (MSM-PDs). The low temperature oxide layer was prepared by using liquid phase deposition (LPD) process and deposited in regions between the interdigitated electrodes of MSM-PDs. A four time improvement in the dark current of the passivated SiGe device was achieved. The introduction of LPD-oxide passivation layer is believed to suppress surface states situated on SiGe surface and therefore reduce surface leakage. Additionally, such a thin oxide (15 nm) passivation layer did not affect the optical performance of passivated MSM-PDs. (c) 2006 Elsevier B.V. All rights reserved.
|Appears in Collections:||光電工程研究所|
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