Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39841
標題: Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors
作者: Yang, Y.J.
張書通
Ho, W.S.
Huang, C.F.
Chang, S.T.
Liu, C.W.
關鍵字: monte-carlo;si;ge;substrate;nmosfets;silicon
Project: Applied Physics Letters
期刊/報告no:: Applied Physics Letters, Volume 91, Issue 10.
摘要: 
The dependence of electron mobility on strain, channel direction, and substrate orientation is theoretically studied for the germanium n-channel metal-oxide-semiconductor field-effect transistors. For the unstrained channel, (111) substrate can provide the highest mobility among the three orientations, mainly due to its largest quantization mass and smallest conductivity mass in L valley. The tensile strain parallel to the [(1) over bar 10] channel direction on (111) substrate gives 4.1 times mobility of Si at 1 MV/cm, and the mobility enhancement starts to saturate for the strain larger than 0.5%. The compressive strain of similar to 1.5% transverse to [(1) over bar 10] on (111) substrate yields 2.9 times mobility enhancement at 1 MV/cm. (c) 2007 American Institute of Physics.
URI: http://hdl.handle.net/11455/39841
ISSN: 0003-6951
DOI: 10.1063/1.2779845
Appears in Collections:光電工程研究所

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