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http://hdl.handle.net/11455/39860| 標題: | High Ge Content of SiGe Channel pMOSFETs on Si (110) Surfaces | 作者: | Lee, M.H. 張書通 Chang, S.T. Maikap, S. Peng, C.Y. Lee, C.H. |
關鍵字: | Mobility;orientation;SiGe;strain;(110);inversion-layers | Project: | Ieee Electron Device Letters | 期刊/報告no：: | Ieee Electron Device Letters, Volume 31, Issue 2, Page(s) 141-143. | 摘要: | The characteristics of Si(0.2)Ge(0.8) channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si(0.2)Ge(0.8) (110) PFET are enhanced by 70% and by 80% for the < 110 > channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe < 110 >/(110) PFET has similar to 200% hole mobility enhancement. The performance difference of the SiGe < 110 >/(110) and < 100 >/(110) PFET is about 2.7 times when considering mobility, and these effects are explained. |
URI: | http://hdl.handle.net/11455/39860 | ISSN: | 0741-3106 | DOI: | 10.1109/led.2009.2036138 |
| Appears in Collections: | 光電工程研究所 |
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