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|標題:||High Ge Content of SiGe Channel pMOSFETs on Si (110) Surfaces||作者:||Lee, M.H.
|關鍵字:||Mobility;orientation;SiGe;strain;(110);inversion-layers||Project:||Ieee Electron Device Letters||期刊/報告no：:||Ieee Electron Device Letters, Volume 31, Issue 2, Page(s) 141-143.||摘要:||
The characteristics of Si(0.2)Ge(0.8) channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si(0.2)Ge(0.8) (110) PFET are enhanced by 70% and by 80% for the < 110 > channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe < 110 >/(110) PFET has similar to 200% hole mobility enhancement. The performance difference of the SiGe < 110 >/(110) and < 100 >/(110) PFET is about 2.7 times when considering mobility, and these effects are explained.
|Appears in Collections:||光電工程研究所|
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