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|標題:||Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal-Oxide-Silicon Capacitors||作者:||Peng, C.Y.
|關鍵字:||Capacitor;deformation potential;flatband voltage;strained-Si;stress-free;threshold voltage;thin-films;poly-si;mosfet;mobility;stress;gate;semiconductors;s/d;ge||Project:||Ieee Transactions on Electron Devices||期刊/報告no：:||Ieee Transactions on Electron Devices, Volume 56, Issue 8, Page(s) 1736-1745.||摘要:||
The flatband-voltage shift of metal-oxide-silicon capacitors is investigated under the application of low-level stress (up to 220 MPa of biaxial stress and 380 MPa of uniaxial stress) to different substrate orientations. We propose that the flatband-voltage shift be modeled as the net effect of silicon-band-edge shifts and modulation of the separation between the band edge and the Fermi level under low levels of applied mechanical strain. For the (001) n-type substrate, a negative flatband-voltage shift is observed due mainly to the downward shift of the conduction-band edge, while a positive flatband-voltage shift is observed for the (001) p-type substrate due to the upward shift of the valence-band edge. For the uniaxial tensile strain on n-substrate capacitors for (110) and (111) substrates, the modulation of band-edge and Fermi-level separation by the conduction-band density of states exceeds the downward shift of the conduction band, which induces a positive flatband shift that is distinct from that observed in the (001) n-substrate. The shift of the band edges is determined by the proposed model and compared with theoretical calculations.
|Appears in Collections:||光電工程研究所|
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