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標題: Mechanical Bending Cycles of Hydrogenated Amorphous Silicon Layer on Plastic Substrate by Plasma-Enhanced Chemical Vapor Deposition for Use in Flexible Displays
作者: Lee, M.H.
Chang, S.T.
Wu, Y.C.
Tang, M.
Lin, C.Y.
關鍵字: thin-film transistors;stability;strain
Project: Japanese Journal of Applied Physics
期刊/報告no:: Japanese Journal of Applied Physics, Volume 48, Issue 2.
Atomic force microscopy (AFM) measurements and micro-Raman spectra show that the long-range hydrogenated amorphous silicon (a-Si:H) bond structure on a plastic substrate is deformed and distorted after being subjected to bending cycles, whereas the short-range a-Si:H bond structure remains the same. The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage, subthreshold swing, and mobility of carriers. From AFM and micro-Raman spectroscopy, we are able to understand the morphology of an a-Si:H layer under mechanical strain, which is the fundamental reliability issue for the development of flexible electronics. (C) 2009 The Japan Society of Applied Physics
ISSN: 0021-4922
DOI: 10.1143/jjap.48.021301
Appears in Collections:光電工程研究所

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