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|標題:||p-Type Tunneling Field-Effect Transistors on (100)- and (110)- Oriented Si Substrates||作者:||Lee, M.H.
|關鍵字:||diffusion;oxidation;silicon||Project:||Japanese Journal of Applied Physics||期刊/報告no：:||Japanese Journal of Applied Physics, Volume 50, Issue 10.||摘要:||
p-Type tunneling field-effect transistors (TFETs) on (100)- and (110)-oriented Si substrates were fabricated, and their electrical characteristics were studied. High-k dielectric and metal gate were integrated as a gate stack, and the gate-last process was performed to obtain a high-quality dielectric layer and prevent crystallization. The orientation effect of p-type TFETs on (100) and (110) Si wafers is a high ION in the case of the (110) orientation as compared with that of the (100) p-type TFET, which is a high band-to-band tunneling current. The junction profile and effective mass were discussed to determine possible reasons for the orientation effect of p-type TFETs on (100) and (110) Si wafers. (C) 2011 The Japan Society of Applied Physics
|Appears in Collections:||光電工程研究所|
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