Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39868
標題: p-Type Tunneling Field-Effect Transistors on (100)- and (110)- Oriented Si Substrates
作者: Lee, M.H.
張書通
Hsieh, B.F.
Wu, T.H.
Chang, S.T.
關鍵字: diffusion;oxidation;silicon
Project: Japanese Journal of Applied Physics
期刊/報告no:: Japanese Journal of Applied Physics, Volume 50, Issue 10.
摘要: 
p-Type tunneling field-effect transistors (TFETs) on (100)- and (110)-oriented Si substrates were fabricated, and their electrical characteristics were studied. High-k dielectric and metal gate were integrated as a gate stack, and the gate-last process was performed to obtain a high-quality dielectric layer and prevent crystallization. The orientation effect of p-type TFETs on (100) and (110) Si wafers is a high ION in the case of the (110) orientation as compared with that of the (100) p-type TFET, which is a high band-to-band tunneling current. The junction profile and effective mass were discussed to determine possible reasons for the orientation effect of p-type TFETs on (100) and (110) Si wafers. (C) 2011 The Japan Society of Applied Physics
URI: http://hdl.handle.net/11455/39868
ISSN: 0021-4922
DOI: 10.1143/jjap.50.10pc01
Appears in Collections:光電工程研究所

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