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|標題:||Electron transport model for strained silicon-carbon alloy||作者:||Chang, S.T.
|關鍵字:||Si(1-x)(x)(C) mobility;alloy scattering;strain;impurity scattering;Monte Carlo simulation;lattice scattering;si1-ycy||Project:||Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers||期刊/報告no：:||Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, Volume 44, Issue 4B, Page(s) 2257-2262.||摘要:||
Electron mobility in strained Si(1-x)(x)(C) (layers grown on a Si substrate is calculated as functions of carbon content, alloy scattering potential, and doping concentration at 300 K. Alloy scattering potential affects low-field mobility significantly. For a low alloy scattering potential (<0.6eV), the strain effect is fully beneficial for in-plane transport in undoped Si)(C)(. For a high alloy scattering potential (>1eV) the effects of alloy scattering override the strain-induced reduction in effective mass in undoped strained Si)(C)(. The electron transport model is validated by experimental data. In the doped strained Si)(C)(1-x)(x)(1-x)(x)(1-x)(x), both results from our model and experiments on electron transport indicate that the effects of alloy and impurity scattering prevail over the expected gain due to strain.
|Appears in Collections:||光電工程研究所|
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