Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39876
DC FieldValueLanguage
dc.contributor.authorChang, S.T.en_US
dc.contributor.author張書通zh_TW
dc.contributor.authorLin, C.Y.en_US
dc.date2005zh_TW
dc.date.accessioned2014-06-06T08:02:49Z-
dc.date.available2014-06-06T08:02:49Z-
dc.identifier.issn0021-4922zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/39876-
dc.description.abstractElectron mobility in strained Si(1-x)(x)(C) (layers grown on a Si substrate is calculated as functions of carbon content, alloy scattering potential, and doping concentration at 300 K. Alloy scattering potential affects low-field mobility significantly. For a low alloy scattering potential (<0.6eV), the strain effect is fully beneficial for in-plane transport in undoped Si)(C)(. For a high alloy scattering potential (>1eV) the effects of alloy scattering override the strain-induced reduction in effective mass in undoped strained Si)(C)(. The electron transport model is validated by experimental data. In the doped strained Si)(C)(1-x)(x)(1-x)(x)(1-x)(x), both results from our model and experiments on electron transport indicate that the effects of alloy and impurity scattering prevail over the expected gain due to strain.en_US
dc.language.isoen_USzh_TW
dc.relationJapanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papersen_US
dc.relation.ispartofseriesJapanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, Volume 44, Issue 4B, Page(s) 2257-2262.en_US
dc.relation.urihttp://dx.doi.org/10.1143/jjap.44.2257en_US
dc.subjectSi(1-x)(x)(C) mobilityen_US
dc.subjectalloy scatteringen_US
dc.subjectstrainen_US
dc.subjectimpurity scatteringen_US
dc.subjectMonte Carlo simulationen_US
dc.subjectlattice scatteringen_US
dc.subjectsi1-ycyen_US
dc.titleElectron transport model for strained silicon-carbon alloyen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1143/jjap.44.2257zh_TW
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.languageiso639-1en_US-
item.fulltextno fulltext-
item.grantfulltextnone-
item.openairetypeJournal Article-
Appears in Collections:光電工程研究所
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