Electron transport model for strained silicon-carbon alloy

Abstract

Electron mobility in strained Si(1-x)(x)(C) (layers grown on a Si substrate is calculated as functions of carbon content, alloy scattering potential, and doping concentration at 300 K. Alloy scattering potential affects low-field mobility significantly. For a low alloy scattering potential (<0.6eV), the strain effect is fully beneficial for in-plane transport in undoped Si)(C)(. For a high alloy scattering potential (>1eV) the effects of alloy scattering override the strain-induced reduction in effective mass in undoped strained Si)(C)(. The electron transport model is validated by experimental data. In the doped strained Si)(C)(1-x)(x)(1-x)(x)(1-x)(x), both results from our model and experiments on electron transport indicate that the effects of alloy and impurity scattering prevail over the expected gain due to strain.