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|標題:||Comprehensive study of the Raman shifts of strained silicon and germanium||作者:||Peng, C.Y.
|關鍵字:||elemental semiconductors;germanium;lattice dynamics;light;polarisation;phonons;Raman spectra;red shift;silicon;spectral line;shift;tensile strength;micro-raman;stress;si;scattering;ge;phonons;diamond;alloys;semiconductors;enhancement||Project:||Journal of Applied Physics||期刊/報告no：:||Journal of Applied Physics, Volume 105, Issue 8.||摘要:||
Raman shifts are investigated on silicon and germanium substrates under the uniaxial tensile strain on various substrate orientations. The strain splits the triply degenerate optical (LO, TO) phonons at the zone center (k approximate to 0). The redshifts of Si Raman peaks induced by the tensile strain on all substrate orientations are observed. With the specific polarization of the incident light, however, the unusual blueshifts of Ge Raman peaks induced by the tensile strain are observed on (110) and (111) Ge substrates. By using the suitable phenomenological constants and taking the Raman selection rules into consideration, the experimental results are in reasonable agreement with the lattice dynamical theory.
|Appears in Collections:||光電工程研究所|
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