Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39883
DC FieldValueLanguage
dc.contributor.authorPeng, C.Y.en_US
dc.contributor.author張書通zh_TW
dc.contributor.authorHuang, C.F.en_US
dc.contributor.authorFu, Y.C.en_US
dc.contributor.authorYang, Y.H.en_US
dc.contributor.authorLai, C.Y.en_US
dc.contributor.authorChang, S.T.en_US
dc.contributor.authorLiu, C.W.en_US
dc.date2009zh_TW
dc.date.accessioned2014-06-06T08:02:50Z-
dc.date.available2014-06-06T08:02:50Z-
dc.identifier.issn0021-8979zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/39883-
dc.description.abstractRaman shifts are investigated on silicon and germanium substrates under the uniaxial tensile strain on various substrate orientations. The strain splits the triply degenerate optical (LO, TO) phonons at the zone center (k approximate to 0). The redshifts of Si Raman peaks induced by the tensile strain on all substrate orientations are observed. With the specific polarization of the incident light, however, the unusual blueshifts of Ge Raman peaks induced by the tensile strain are observed on (110) and (111) Ge substrates. By using the suitable phenomenological constants and taking the Raman selection rules into consideration, the experimental results are in reasonable agreement with the lattice dynamical theory.en_US
dc.language.isoen_USzh_TW
dc.relationJournal of Applied Physicsen_US
dc.relation.ispartofseriesJournal of Applied Physics, Volume 105, Issue 8.en_US
dc.relation.urihttp://dx.doi.org/10.1063/1.3110184en_US
dc.subjectelemental semiconductorsen_US
dc.subjectgermaniumen_US
dc.subjectlattice dynamicsen_US
dc.subjectlighten_US
dc.subjectpolarisationen_US
dc.subjectphononsen_US
dc.subjectRaman spectraen_US
dc.subjectred shiften_US
dc.subjectsiliconen_US
dc.subjectspectral lineen_US
dc.subjectshiften_US
dc.subjecttensile strengthen_US
dc.subjectmicro-ramanen_US
dc.subjectstressen_US
dc.subjectsien_US
dc.subjectscatteringen_US
dc.subjectgeen_US
dc.subjectphononsen_US
dc.subjectdiamonden_US
dc.subjectalloysen_US
dc.subjectsemiconductorsen_US
dc.subjectenhancementen_US
dc.titleComprehensive study of the Raman shifts of strained silicon and germaniumen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1063/1.3110184zh_TW
item.openairetypeJournal Article-
item.fulltextno fulltext-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.languageiso639-1en_US-
Appears in Collections:光電工程研究所
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