Please use this identifier to cite or link to this item:
|標題:||Analysis and Modeling of Nano-Crystalline Silicon TFTs on Flexible Substrate with Mechanical Strain||作者:||Lee, M.H.
|關鍵字:||Flexible;Mechanical Strain;Nano-Crystalline Silicon;Gap State Density;thin-film transistors;amorphous-silicon||Project:||Journal of Nanoscience and Nanotechnology||期刊/報告no：:||Journal of Nanoscience and Nanotechnology, Volume 11, Issue 12, Page(s) 10485-10488.||摘要:||
The gap state density of nano-crystalline silicon active layers on a flexible substrate was redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain, the deep states redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states, which manifest with exponential distributions. We conclude that the gap state density with TOAD modeling under mechanical strain is the fundamental reliability issue for the development of flexible electronics.
|Appears in Collections:||光電工程研究所|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.