Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39891
標題: Analysis and Modeling of Nano-Crystalline Silicon TFTs on Flexible Substrate with Mechanical Strain
作者: Lee, M.H.
張書通
Chang, S.T.
Hsieh, B.F.
Huang, J.J.
Lee, C.C.
關鍵字: Flexible;Mechanical Strain;Nano-Crystalline Silicon;Gap State Density;thin-film transistors;amorphous-silicon
Project: Journal of Nanoscience and Nanotechnology
期刊/報告no:: Journal of Nanoscience and Nanotechnology, Volume 11, Issue 12, Page(s) 10485-10488.
摘要: 
The gap state density of nano-crystalline silicon active layers on a flexible substrate was redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain, the deep states redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states, which manifest with exponential distributions. We conclude that the gap state density with TOAD modeling under mechanical strain is the fundamental reliability issue for the development of flexible electronics.
URI: http://hdl.handle.net/11455/39891
ISSN: 1533-4880
DOI: 10.1166/jnn.2011.3990
Appears in Collections:光電工程研究所

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