Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39923
標題: The role of carbon on performance of strained-Si:C surface channel NMOSFETs
作者: Lee, M.H.
張書通
Chang, S.T.
Maikap, S.
Huang, C.F.
關鍵字: Carbon incorporation;Strain;Alloy scattering;Sheet resistance;si1-xcx alloys
Project: Solid-State Electronics
期刊/報告no:: Solid-State Electronics, Volume 52, Issue 10, Page(s) 1569-1572.
摘要: 
Carbon incorporation in strained-Si surface channel NMOSFET is investigated. Due to the similar to 52% lattice mismatch between silicon and carbon, the channel is expected to have higher strain than strained-Si, indicating that the carrier mobility can be enhanced significantly. There is a similar to 40% electron mobility enhancement for incorporated carbon content of 0.25% in strained-Si NMOSFETs compared to unstrained Si channels. The performance of channels with increased strain is not as high as theoretical predictions. This is due to the large D-it at the oxide/strained-Si:C interface and alloy scattering, which degrades carrier mobility enhancement. (C) 2008 Elsevier Ltd. All rights reserved.
URI: http://hdl.handle.net/11455/39923
ISSN: 0038-1101
DOI: 10.1016/j.sse.2008.06.017
Appears in Collections:光電工程研究所

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