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|標題:||The role of carbon on performance of strained-Si:C surface channel NMOSFETs||作者:||Lee, M.H.
|關鍵字:||Carbon incorporation;Strain;Alloy scattering;Sheet resistance;si1-xcx alloys||Project:||Solid-State Electronics||期刊/報告no：:||Solid-State Electronics, Volume 52, Issue 10, Page(s) 1569-1572.||摘要:||
Carbon incorporation in strained-Si surface channel NMOSFET is investigated. Due to the similar to 52% lattice mismatch between silicon and carbon, the channel is expected to have higher strain than strained-Si, indicating that the carrier mobility can be enhanced significantly. There is a similar to 40% electron mobility enhancement for incorporated carbon content of 0.25% in strained-Si NMOSFETs compared to unstrained Si channels. The performance of channels with increased strain is not as high as theoretical predictions. This is due to the large D-it at the oxide/strained-Si:C interface and alloy scattering, which degrades carrier mobility enhancement. (C) 2008 Elsevier Ltd. All rights reserved.
|Appears in Collections:||光電工程研究所|
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