Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39929
標題: Effective mass and subband structure of strained Si in a PMOS inversion layer with external stress
作者: Chang, S.T.
張書通
Huang, J.
Tang, M.
Lin, C.Y.
關鍵字: SiGe;Subband;Strain;Effective mass;electron-transport;hole
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 518, Page(s) S154-S158.
摘要: 
This study theoretically examines the hole subband structures in inversion layers of strained Silicon (Si) transistors under different strain conditions. Two strain conditions of Si P-channel metal-oxide-semiconductor (PMOS), including intrinsic strain resulting from growing the Si on the (001) Silicon-Germanium (SiGe) substrate and mechanical stress applied externally, were considered in this work. Various effective masses of hole inversion layers used in technology computer-aided design (TCAD) simulations were investigated, such as the quantization effective mass, m(z), the density of states effective mass, m(DOS), and the conductivity mass, m(sigma). It was then demonstrated that the external stress applied parallel to the channel direction for holes in the inversion layer with intrinsic biaxial strain is an optimal method of lowering m(sigma) and increasing m(DOS) for the top subband. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/39929
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2009.10.077
Appears in Collections:光電工程研究所

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