Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39972
標題: TCAD simulation of hydrogenated amorphous silicon-carbon/microcrystalline-silicon/hydrogenated amorphous silicon-germanium PIN solar cells
作者: Chang, S.T.
張書通
Tang, M.
He, R.Y.
Wang, W.C.
Pei, Z.
Kung, C.Y.
裴靜偉
貢中元
關鍵字: Solar cell;Microcrystalline-silicon;Grain size;microcrystalline silicon
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 518, Page(s) S250-S254.
摘要: 
This study investigates the device performance of hydrogenated amorphous silicon-carbon (a-SiC:H)/microcrystalline-silicon (mu c-Si)/hydrogenated amorphous silicon-germanium (a-SiGe:H) PIN thin film solar cells using Technology Computer Aided Design (TCAD) simulations. The physical parameters used in the TCAD simulations are calibrated to reproduce experimental data. The influence of the density of states (DOS) and intrinsic layer (I-layer) thickness on the performance of thin film solar cells is investigated. According to the simulation results, the highest efficiency is approximately 9% when the I-layer thickness is 4 mu m. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/39972
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2009.10.100
Appears in Collections:光電工程研究所

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