Please use this identifier to cite or link to this item:
標題: Nonvolatile polycrystalline silicon thin film transistor memory using silicon-rich silicon nitride as charge storage layer
作者: Pei, Z.
Chung, A.
Hwang, H.L.
Project: Applied Physics Letters
期刊/報告no:: Applied Physics Letters, Volume 90, Issue 22.
In this work, the authors report a memory device based on a Si thin film transistor (TFT) structure by incorporating silicon-rich silicon nitride (SRSN) film in the gate dielectric stacks as the charge storage layer. The SRSN film has a lower barrier for hole injection than the barrier for electron injection. Therefore, the memory window is dominated by hole injection. The memory window for TFT nonvolatile memory at steady state as large as 6.8 V is observed, and the memory window is around 3 V under pulse operation. In addition, this TFT memory has no significant degradation after 500 times of switching operation. (C) 2007 American Institute of Physics.
ISSN: 0003-6951
DOI: 10.1063/1.5745265
Appears in Collections:光電工程研究所

Show full item record

Google ScholarTM




Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.