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標題: A UV-Erasable Stacked Diode-Switch Organic Nonvolatile Bistable Memory on Plastic Substrates
作者: Lin, H.T.
Pei, Z.W.
Chen, J.R.
Chan, Y.J.
關鍵字: Diode switch;memory;retention time;ultraviolet (UV) erasable;thin-film;device
Project: Ieee Electron Device Letters
期刊/報告no:: Ieee Electron Device Letters, Volume 30, Issue 1, Page(s) 18-20.
In this letter, we demonstrate a robust and stacked diode-switch organic nonvolatile bistable memory (DS-ONBM) using polymer-chain-stabilized gold nanoparticles on a plastic substrate in ambient air. The absorption spectrum of the gold nanoparticles shows ultraviolet (UV) absorption. Therefore, UV light is used to erase data in the DS-ONBM. The data in the memory can be retained for more than ten days in the air. The estimated retention time is nearly a year. This DS-ONBM is demonstrated to read, write, and retain the data and is reusable by UV-light illumination. Hence, the UV-erasable DS-ONBM is fully applicable in printed electronics such as RFID tags.
ISSN: 0741-3106
DOI: 10.1109/led.2008.2009009
Appears in Collections:光電工程研究所

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