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http://hdl.handle.net/11455/39985
標題: | A UV-Erasable Stacked Diode-Switch Organic Nonvolatile Bistable Memory on Plastic Substrates | 作者: | Lin, H.T. 裴靜偉 Pei, Z.W. Chen, J.R. Chan, Y.J. |
關鍵字: | Diode switch;memory;retention time;ultraviolet (UV) erasable;thin-film;device | Project: | Ieee Electron Device Letters | 期刊/報告no:: | Ieee Electron Device Letters, Volume 30, Issue 1, Page(s) 18-20. | 摘要: | In this letter, we demonstrate a robust and stacked diode-switch organic nonvolatile bistable memory (DS-ONBM) using polymer-chain-stabilized gold nanoparticles on a plastic substrate in ambient air. The absorption spectrum of the gold nanoparticles shows ultraviolet (UV) absorption. Therefore, UV light is used to erase data in the DS-ONBM. The data in the memory can be retained for more than ten days in the air. The estimated retention time is nearly a year. This DS-ONBM is demonstrated to read, write, and retain the data and is reusable by UV-light illumination. Hence, the UV-erasable DS-ONBM is fully applicable in printed electronics such as RFID tags. |
URI: | http://hdl.handle.net/11455/39985 | ISSN: | 0741-3106 | DOI: | 10.1109/led.2008.2009009 |
Appears in Collections: | 光電工程研究所 |
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