Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/40005
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dc.contributor.authorLin, Y.T.en_US
dc.contributor.author貢中元zh_TW
dc.contributor.authorChung, P.H.en_US
dc.contributor.authorLai, H.W.en_US
dc.contributor.authorSu, H.L.en_US
dc.contributor.authorLyu, D.Y.en_US
dc.contributor.authorYen, K.Y.en_US
dc.contributor.authorLin, T.Y.en_US
dc.contributor.authorKung, C.Y.en_US
dc.contributor.authorGong, J.R.en_US
dc.contributor.author龔志榮zh_TW
dc.date2009zh_TW
dc.date.accessioned2014-06-06T08:03:00Z-
dc.date.available2014-06-06T08:03:00Z-
dc.identifier.issn0169-4332zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/40005-
dc.description.abstractAtomic layer deposition (ALD) of zinc oxide (ZnO) films on (0 0 0 1) sapphire substrates was conducted at low temperatures by using diethyl-zinc (DEZn) and nitrous oxide (N(2)O) as precursors. It was found that a monolayer-by-monolayer growth regime occurred at 300 degrees C in a range of DEZn flow rates from 5.7 to 8.7 mu mol/min. Furthermore, the temperature self-limiting process window for the ALD-grown ZnO films was also observed ranging from 290 to 310 degrees C. A deposition mechanism is proposed to explain how saturated growth of ZnO is achieved by using DEZn and N(2)O. Transmission spectroscopic studies of the ZnO films prepared in the self-limiting regime show that the transmittances of ZnO films are as high as 80% in visible and near infrared spectra. Experimental results indicate that ZnO films with high optical quality can be achieved by ALD at low temperatures using DEZn and N(2)O precursors. (C) 2009 Elsevier B. V. All rights reserved.en_US
dc.language.isoen_USzh_TW
dc.relationApplied Surface Scienceen_US
dc.relation.ispartofseriesApplied Surface Science, Volume 256, Issue 3, Page(s) 819-822.en_US
dc.relation.urihttp://dx.doi.org/10.1016/j.apsusc.2009.08.067en_US
dc.subjectZnOen_US
dc.subjectAtomic layer depositionen_US
dc.subjectAbsorption spectroscopyen_US
dc.subjectepitaxyen_US
dc.subjectn2oen_US
dc.titleSelf-limiting growth of ZnO films on (0001) sapphire substrates by atomic layer deposition at low temperatures using diethyl-zinc and nitrous oxideen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.apsusc.2009.08.067zh_TW
item.cerifentitytypePublications-
item.grantfulltextnone-
item.languageiso639-1en_US-
item.fulltextno fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeJournal Article-
Appears in Collections:光電工程研究所
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