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|標題:||Enhanced conductivity of aluminum doped ZnO films by hydrogen plasma treatment||作者:||Chang, H.P.
|關鍵字:||Aluminum doped zinc oxide (AZO);Hydrogen plasma;Magnetron sputtering;Resistivity;oxide thin-films;zinc-oxide;solar-cells;tin oxide;al films;temperature;substrate;oxygen||Project:||Thin Solid Films||期刊/報告no：:||Thin Solid Films, Volume 518, Issue 24, Page(s) 7445-7449.||摘要:||
Aluminum doped zinc oxide (AZO) thin films prepared by radio-frequency (RF) magnetron sputtering at various RF power were treated by hydrogen plasma to enhance the characteristics for transparent electrode applications. The hydrogen plasma treatment was carried out at 300 degrees C in a plasma enhanced chemical vapor deposition system. X-ray diffraction analysis shows that all AZO films have a (002) preferred orientation and film crystallinity seems no significant change after plasma treatment. The plasma treatment not only significantly decreases film resistivity but enhances electrical stability as aging in air ambient. The improved electrical properties are due to desorption of weakly bonded oxygen species, formation of Zn-H type species and passivation of deep-level defects during plasma treatment. (C) 2010 Elsevier B.V. All rights reserved.
|Appears in Collections:||光電工程研究所|
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