Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/40018
標題: A SiGe/Si multiple quantum well avalanche photodetector
作者: Sun, P.H.
張書通
Chang, S.T.
Chen, Y.C.
Lin, H.C.
林泓均
關鍵字: Avalanche photodiodes (APDs);Photoluminescence (PL);SiGe;UHV/CVD;Multi-quantum well (MQW);strained-layer heterostructures;intrinsic optical absorption;band-gap;silicon;germanium;alloys
Project: Solid-State Electronics
期刊/報告no:: Solid-State Electronics, Volume 54, Issue 10, Page(s) 1216-1220.
摘要: 
The present work investigates the performance of APDs with a SiGe/Si multi-quantum well (MQW) structure, which was fabricated using ultrahigh-vacuum chemical vapor deposition (UHV/CVD). Absorption of radiation and avalanche multiplication occur in both SiGe/Si MQW and the i-SiGe layer. Intense photoluminescence (PL) from strained, epitaxial SiGe alloys grown using UHV/CVD was reported with multiple SiGe/Si MQW and i-SiGe layer. It was found that the avalanche multiplication occurred at about 7 V. when exceeding 7 V. the responsiveness and quantum efficiency rapidly increased. An APD consisting of an epitaxial SiGe/Si MQW as the active absorption layer with intense response in the 800-1500 nm wavelength range is also demonstrated. Crown Copyright (C) 2010 Published by Elsevier Ltd. All rights reserved.
URI: http://hdl.handle.net/11455/40018
ISSN: 0038-1101
DOI: 10.1016/j.sse.2010.05.023
Appears in Collections:光電工程研究所

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