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|標題:||A SiGe/Si multiple quantum well avalanche photodetector||作者:||Sun, P.H.
|關鍵字:||Avalanche photodiodes (APDs);Photoluminescence (PL);SiGe;UHV/CVD;Multi-quantum well (MQW);strained-layer heterostructures;intrinsic optical absorption;band-gap;silicon;germanium;alloys||Project:||Solid-State Electronics||期刊/報告no：:||Solid-State Electronics, Volume 54, Issue 10, Page(s) 1216-1220.||摘要:||
The present work investigates the performance of APDs with a SiGe/Si multi-quantum well (MQW) structure, which was fabricated using ultrahigh-vacuum chemical vapor deposition (UHV/CVD). Absorption of radiation and avalanche multiplication occur in both SiGe/Si MQW and the i-SiGe layer. Intense photoluminescence (PL) from strained, epitaxial SiGe alloys grown using UHV/CVD was reported with multiple SiGe/Si MQW and i-SiGe layer. It was found that the avalanche multiplication occurred at about 7 V. when exceeding 7 V. the responsiveness and quantum efficiency rapidly increased. An APD consisting of an epitaxial SiGe/Si MQW as the active absorption layer with intense response in the 800-1500 nm wavelength range is also demonstrated. Crown Copyright (C) 2010 Published by Elsevier Ltd. All rights reserved.
|Appears in Collections:||光電工程研究所|
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