Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4032
標題: 具電流阻擋層高效率氮化銦鎵發光二極體之研究
The high-efficiency InGaN-based Light-Emitting Diode With Current Blocking Layer
作者: 陳炳宏
Chen, Ping-Hung
關鍵字: Current Blocking Layer;電流阻擋層;Indium Gallium Nitride(InGaN);Current Density;氮化銦鎵;電流密度
出版社: 精密工程學系所
引用: [1] I. Eliashevich, Y. Li, A.Osinsky, C. A. Tran, M. G. Brown, and R. F. Karlicek, Jr., Proc. SPIE 3621, 28, (1999). [2] S. Nakamura, T. Mukai, and M.Senoh, Appl. Phys. Lett.64, 1687, (1994). [3] D. A. Vanderwater, I. H. Tan, G. E. Hoefler, D. C. Defevere, and F. A. Kish, “High-Brightness AlGaInP Light-Eemitting Diodes, ” Proc. IEEE, vol. 85, pp. 1752-1764, Nov, (1997). [4] X. Guo and E. F. Schuberta, “Current Crowding in GaN/InGaN Light Emitting Diodes on Insulating Substrates,” J. Appl. Phys. vol. 90, no. 8, pp. 4192-4195, (2001). [5] C.Huh, S. W. Kim, H. S. Kim, H. M. Kim, H. Hwang, and S. J. Park, Appl. Phys. Lett. 78, 1766, (2001). [6] H. Kim, J. M. Lee, C. Huh, S. W. Kim, D. J. Park, and H. Hwanga, “Modeling of a GaN-based light-emitting diode for uniform current spresding,” Appl. Phys. Lett. vol. 77, no. 12, pp. 1903-1905, (2000). [7] I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Schere, “30% External Quantum Efficiency from Surface Textured, Thin-Film Light-Emitting Diodes,” Appl. Phys. Lett. vol. 63, no. 16, pp. 2174-2176, (1993). [8] 李家銘,“氮化鎵發光二極體之研製,” 國立中央大學電機工程所, 台灣, (2003). [9] C. Huh, J. M. Lee, D. J. Kim, and S. J. Park, “Improvement in Light-Output Efficiency of InGaN/GaN Multiple-Quantum Well Light-Emitting Diodes by Current Blocking Layer,” Appl. Phys. Vol. 92, no. 5, September, (2002). [10] C. M. Lee, C. C. Chuo, Y. C. Liu, I. L. Chen,and J. I. Chyi, “InGaN-GaN MQW LEDs With Current Blocking Layer Formed By Selective Activation,” IEEE, vol. 25, no. 6, June, (2004). [11] C. C. Liu, Y. H. Chen, M. P. Houng, Y. H. Wang, Y. K. Su, W. B. Chen, and S. M. Chen, “Improved Light-Output Power of GaN LEDs by Selective Region Activation,” IEEE, vol. 16, no. 6, June, (2004). [12] Chia-Feng Lin, “High-Efficiency InGaN Light-Emitting Diode Via Didewall Selective Etching and Oxidation,” Journal of The Electrochemical Society, 153, 1, G39-G43, (2006). [13] Bahaa E. A. Saleh, Marlvin Carl Teich, “Fundamentals of Photonics,” John Wiley & Sons, Inc, (1997). [14] 史光國, “半導體發光二極體及固體照明,” 初版, 7-72, 台北, 全華科技圖書股份有限公司, (2005). [15] 史光國, “現代半導體發光及雷射二極體材料技術,” 初版, 40-115, 台北, 全華科技圖書股份有限公司, (2001). [16] 杜文杰, “P-型氮化鎵歐姆接觸之研究與氮化鎵光檢測器之製作,” 國立成功大學微電子工程研究所, 台灣, (2004). [17] 陳靜茹, “氮化鎵藍光發光二極體增強光強度之研究,” 國立中山大學電機工程研究所, 台灣, (2003).
摘要: 
本實驗探討電流阻擋層對氮化銦鎵發光元件之亮度增益影響。利用蒸鍍與蝕刻的方式直接在氮化鎵發光元件平台上之電極相對位置下方製作二氧化矽電流阻擋層。此技術是利用阻擋層之絕緣特性,使電流不直接由電極接觸往下灌,強迫電流在透明導電層更均勻擴散而往下注入P型氮化鎵表面。利用阻擋層對元件亮度增益依元件電極配置不同分別有15%(對角排列)及30%(直線排列)之亮度提升。並針對阻擋層對元件光電特性的影響進行分析,實驗中設計不同光罩,探討電流密度與有效面積對亮度、波長、外部量子效率等的影響,並在電極下方成長金屬反射層加以討論,分析P型金屬對發光效率提升與導入量產可行性評估。

In this thesis, the output power enhancement of the InGaN-based light-emitting diode was discussed by adding the current blocking layer. The SiO2 current blocking layer was defined on the mesa region under the p-type electrode. The injection current was blocked at the p-type electrode region, and the current was spread uniformly into the ITO transparent metal layer without p-electrode region. The output power enhance ratio of the LEDs with current blocking layer are 15% of electrodes diagonal arranged LEDs and 30% of electrodes linear arranged LEDs. The optical property of emission wavelength and external quantum efficiency on the current blocking LEDs were discussed by varying the mesa pattern design, electrode arrangement, and current density. Emission efficiency and mass production ability of the LED devices with metal reflectance layer and current blocking layer were also discussed in this thesis.
URI: http://hdl.handle.net/11455/4032
其他識別: U0005-0202200711050100
Appears in Collections:精密工程研究所

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