Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4034
標題: 表面粗化技術應用於氮化銦鎵發光二極體元件之研製
Fabricated the InGaN-based light emitting diodes through surface roughen process
作者: 張景豪
Chang, Ching-Chong
關鍵字: GaN;粗化
出版社: 精密工程學系所
引用: [1] 史光國。 現代半導體發光及雷射二極體材料技術。 初版。 40-115。 台北。 全華科技圖書股份有限公司。 (2001)。 [2] 施敏 原著。 黃調元 譯著。 半導體元件物理與製程技術。 第二版。 台北。 高立圖書有限公司。 (2004)。 [3] 史光國。 半導體發光二極體及固體照明。 初版。 7-72。 台北。 全華科技圖書股份有限公司。 (2005)。 [4] 林雅玲。 中原大學應用物理研究所碩士學位論文。 (2001)。 [5] Huh C, Lee K S, Kang E J and Park S J, “Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface”, Appl, Phys, vol 93, 9383-9385, (2003). [6] Fujii T, Gao Y, Sharma R, Hu E L, DenBaars S P and Nakamura S, “Increase in the extraction efficiency of GaN-based light-emitting diode via surface roughening, Appl, Phys, Lett, vol 84, 855-857, (2004). [7] Huang H W, Kao C C, Hsueh T H, Yu C C, Lin C F, Chu J T, Kuo H C and Wang S C, “Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching”, Mater, Sci, Eng, B, 113/2, 125-129, (2004). [8] Hung-Wen Huang, J T Chu, C C Kao, “Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface, Appl, Phys, 16, 1844-1848, (2005). [9] Wei Chih Peng and Yew Chung Sermon Wu, “Improved luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface”, Appl, Phys, Lett, vol 89, 0411160-0411163, (2006).
摘要: 
本論文利用金屬小球作為電漿蝕刻自然光罩進而達到在表面氮化鎵粗化製程,解決因氮化鎵半導體與空氣之折射率差異所產生之全反射效應,導致光取出效率降低,藉由發光元件之粗化表面以提升光取出效率。
實驗流程利用蒸鍍機蒸鍍上5奈米厚金屬鎳膜,利用高速退火爐進行850度、一分鐘高溫融合過程,使表面鎳膜能聚集成球狀,當成電漿蝕刻之自然光罩,感應耦合式電漿蝕刻系統的腔體壓力為3 mtorr,輸入氣體種類與流量為氯氣與氬氣和甲烷,比例為 27 : 3 : 12 sccm,上電極線圈為100W,而下電極線圈為100W,此時的蝕刻速率為500 Å/sec,加以蝕刻一分鐘,再利用1:1之硝酸與鹽酸溶液去除晶圓表面上殘留的鎳金屬,最後利用半導體製程技術製作成發光元件。
在晶粒與積分球亮度量測上,經粗化處理之發光元件有21%和18%亮度提升,並發現在長時間電漿蝕刻的過程中容易造成P-GaN表面結構破壞而使元件操作電壓與逆向漏電流提升,以致影響到發光元件電性,經粗化的晶片與標準晶片在發光亮度分析上,可觀察到發光亮度約有21﹪提昇,此方法可應用於高效率發光元件製作。

In this thesis, the nano-scale metal cluster as the plasma etching mask was used to roughen the GaN surface for solving the lower light extraction efficiency at GaN and air interface. The light extraction efficiency of Nitride-based light-emitting-diodes will be improved by increasing the light scattering from the roughen GaN surface.
The 5nm-thick nickel (Ni) layer was deposited by the evaporation machine, then the fusion process was treated at 850oC for 1 min by using the rapid thermal annealing (RTA) machine to form the Ni cluster as the natural etching mask. The process gas of ICP chamber are Chlorine (Cl2) and Argon (Ar) and the Methane (CH4) as the value of 27: 3: 12 sccm. The GaN etching rate is 500 Å/sec by fixing process condition of the chamber pressure at 3 mtorr, upper electrode coil power at 100W, and bottom electrode coil power at 100W. After etching process, the radical Ni clusters were removed by HNO3 and HCl mixing solution (1:1). The LED devices with and without roughen GaN surface were fabricated through the standard LED process flow.
By increasing the ICP dry etching depth, the operation voltage and reversed leakage current were increased caused by the surface damage. At the optimums roughing conditions, the output power enhance ratios of the roughened LED devices were 21% measured from the chip top direction and 18% measured from integral sphere.
URI: http://hdl.handle.net/11455/4034
其他識別: U0005-0202200711272100
Appears in Collections:精密工程研究所

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