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Effects of Silicone Encapsulant Materials on Performance and Lifetime of Light-Emitting Devices
|關鍵字:||Encapsulation;封裝膠材;Silicone Resin;Surface Mount;light-Emitting Diode;有機矽樹脂;表面黏著型發光二極體||出版社:||精密工程學系所||引用:|| M. S. Weaver, L. A. Michalski, K. Rajan, M. A. Rothman, J. A. Silverail, and J. J. Brown, “Organic light-emitting devices with extended operating lifetimes on plastic substrates,” Appl. Phys. Lett. Vol. 81, pp. 2929-2931, 2002.  P. E. Burrows, S. R. Forrest, T. X. Zhou, and L. Michalski, “Operating lifetime of phosphorescent organic light emitting devices,”Appl. Phys. Lett. Vol. 76, pp. 2493-2495, 2000.  J. C. Scott, J. H. Kaufman, P. J. Brock, R. DiPietro, J. Salem, and J. A. Goitia, “Degradation and failure of MEH-PPV light-emitting diodes,”J. Appl. Phys. Vol. 79, pp. 2745-2751, 1996.  B. H. Cumpston, I. D. Parker, and K. F. Jensen, “In situ characterization of the oxidative degradation of a polymeric light emitting device,” J. Appl. Phys. Vol. 81, pp. 3716-3720, 1997.  彭耀鐶， “高分子材料’’ 大中國圖書公司印行，1995年。  C. F. Tsou and Yu. S. Huang, “Silicon-based packaging platform for light-emitting diode,” IEEE Trans. Advanced Packaging, Vol. 29, pp. 607-614, 2006.  S. C. Wei et al, “AlGaInP light emitting diodes with mirror substrates fabricated by wafer bonding,” Appl. Phys. Lett. Vol. 75, pp. 2230 -2234, 1999.  Y. K. Su, S. J. Chang, C. H. Chen, J. F. Chen, G. C. Chi, J. K. Sheu, W. C. Lai, and J. M. Tsai, “Nitride-Based LEDs with textured side walls,” IEEE Sensors J. Vol. 2, pp. 366, 2002.  S. Nakamura, T. Mukai, andM. Senoh, “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes,” Appl. Phys. Lett. Vol. 64, pp. 1687-1689, 1994.  S. J. Chang, W. S. Chen, Y. C. Lin, C. S. Chang, T. K. Ko, Y. P. Hsu, C. F. Shen, J. M. Tsai, and S. C. Shei “Nitride-based Flip-Chip LEDs with transparent ohmic contacts and reflective mirrors,” IEEE Trans. Electron Devices, Vol. 29, pp. 403-408, 2006.  O. Pursiainen, N. Linder, A. Jaeger, R. Oberschmid, and K. Streubel, “Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes,” Appl. Phys. Lett. Vol. 79, pp. 2895, 2001.  N. F. Gardner et al, “1.4 times efficiency improvement in transparent substrate (AlxGa1-x)0.5In0.5P light emitting diodes with thin active regions,” Appl. Phys. Lett. Vol. 74, pp. 2230-2232, 1999.  M. Broditsky et al, “Light extraction from optically pumped light-emitting diode by thin slab photonic crystals,” Appl. Phys. Lett. Vol. 75, pp. 1036, 1999.  J. K. Kim, H. Luo, E. F. Schubert, J. Cho, C. Sone and Y. Park, “Strongly enhanced phosphor efficiency in GaInN white light -emitting diodes using remote configuration and diffuse reflector cup,” Appl. Phys. Lett. Vol. 44, pp. L649-L651, 2005.  L. H. Lee, and W. C. Chen,“High refractive index thin films prepared from trialkoxysilane-capped poly(methyl methacrylate) -titania hybrid materials,” Chem. Mater. Vol. 13, pp. 1137-1142, 2001.  D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, Member, IEEE, Paul S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE, Vol. 8, pp. 310-320, 2002.  A. M. Norris, Dow Corning, Midland, Michigan and M. E. Gladstone, “Silicone materials for chip-scale packaging,” Chip Scale Rev., pp. 260-527, 1998.  H. Lee and Y. Y. Earmme, “A fracture mechanics analysis of the effects of material properties and geometries of components on various types of package cracks,” IEEE Trans. Comp Package Manufact Technol, Vol. 19, pp. 168-178, 1996.  史光國， “現代半導體發光及雷射二極體材料技術” 全華科技，台北，台灣，pp. 5-1～5-10，2001年。  Srinath Aanegola, Jim Petroski, and Emil Radkov, GELcore LLC, “Let there be light,” SPIE''s Oemagazine, pp. 16-18, 2003.  C. J. Lin, M. J. Lin, S.P. Wu and F. G. Tseng, “High density and through wafer copper interconnections and solder bumps for MEMS wafer-level packaging,” Microsystem Technologies, Vol. 10, pp. 571 -521, 2004.  Y. Sato, S. Ichinosawa, H. kanai, “Operation characteristics and degradation,” IEEE J. Selected Topics in Quantum Electronics, Vol. 4, pp. 40-48, 1998.||摘要:||
This thesis describes the effects of silicone encapsulant materials on the performance and lifetime of light-emitting devices (LEDs). It is well known that the development of LED packaging materials needs to take account of the low heat stress, low water absorbability, high adherence, bearing the soldering tin temperature, mechanical intensity, and the electrical test. Once the conventional epoxy package encountered with the overheated temperature, the polymer molecular bond configuration would be broken and produced undesirable free radicals. This will deteriorate the packaging material and results in the yellowing problem; i.e. making the white light LED have the chromatic polarization phenomenon.
It has been reported that the silicone encapsulation is anti-UV and anti-yellowing. In this study, the influence of silicone encapsulation on the performance of white light LED is investigated. The effects of short wavelength and the chip heating on the LED lamp was examined. It was found that the high refraction index of the silicone encapsulation for the yellow chip showed 2.16 times enhancement in output power as obtained from the integral sphere. From the measurements of Fourier transform infrared spectra, the essential chemical bond of the silicone encapsulation is of benzene ring structure. However, the packaging material with the benzene ring showed evident brightness degradation after the reliability test. The optimization of the encapsulation materials for the bare chips becomes an important issue for high brightness LEDs with high reliability.
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