Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4048
DC FieldValueLanguage
dc.contributor洪瑞華zh_TW
dc.contributor富振華zh_TW
dc.contributor.advisor武東星zh_TW
dc.contributor.author陳信宏zh_TW
dc.contributor.authorChan, Hsin-Hungen_US
dc.contributor.other中興大學zh_TW
dc.date2008zh_TW
dc.date.accessioned2014-06-06T06:26:53Z-
dc.date.available2014-06-06T06:26:53Z-
dc.identifierU0005-0502200714332400zh_TW
dc.identifier.citation[1] 莊賦祥, “藍綠光發光二極體” ,科學發展349期,pp.46-53頁,(2002). [2] 林志勳, “高亮度LED市場發展趨勢與未來展望”,www.challentech. com.tw, pp. 1-3, (2004). [3] G. B. Stringfellow, “High Brightness Light Diode,” Academic Press Inc. Boston, pp. 149-150, (1997). [4] 王為, “LED應用市場蓄勢待發 ”,工業技術與資訊,(2006) [5] 史光國, “現代半導體發光及雷射二極體材料技術, ” 全華科技, 第三章, pp. 57-59, (2001). [6] 江家雯, “LED’s Bright Feature,” 工業技術研究院, 工業技術與資訊174期, pp. 10-11, (2006). [7] R. Windisch and C. Rooman, “Impact of Texture-enhanced Trans- mission on High-efficiency Surface-textured Light Emitting Diodes, ” Appl. Phys. Lett. Vol. 79, pp. 2315-2317, (2001). [8] 陳澤澎, 張智松, 張豪麟, “用於發光元件之粗化介面” ,中華民國專利137366號, (2001). [9] 史光國, “現代半導體發光及雷射二極體材料技術 ”, 全華科技, 第三章, pp. 55-60, (2001). [10] 史光國, “半導體發光二極體及固體照明 ” ,全華科技, 第二章, pp. 19-50,(2005). [11] W. N. Carr and G. E. Pittman, “One-watt GaAs p-n Junction Infrared Source,” Appl. Phys. Lett. Vol. 3, pp. 173-175, (1963). [12] 江家雯, “LED’s Bright Feature,” 工業技術研究院, 工業技術與資訊174期, pp. 10-12, (2006). [13] 史光國, “現代半導體發光及雷射二極體材料技術",全華科技, 第四章, pp. 1-12, (2001). [14] C. K. Kwok and C. C. Chan,“Designing an External Efficient of Over 30% for Light Emitting Diode,”IEEE Lasers and Electro Optics Society Annual Meeting, Vol. 1, pp. 187-188, (1998). [15] 史光國,“半導體發光二極體及固體照明 ”,全華科技,第二章, pp. 33-45,(2005). [16] E. H. Li, C. C. Chan, and C. K. Kwok,“Optimization of Textured Surface Light Emitting Diode,”IEEE Hong Kong Electron Devices Meeting Proceedings, pp. 6-9, (1998). [17] 史光國, “高功率半導體發光二極體及固態照明之近況(中),”工業材料雜誌, 235期, pp. 114-117, (2006). [18] S.M. Pan, R.C. Tu, Y.M. Fan, R.C. Yeh,and J.T. Hsu, “Improvement of InGaN–GaN Light-Emitting Diodes With Surface-Textured Indium–Tin–Oxide Transparent Ohmic Contacts,”IEEE Photonics Technology Letter, p15, (2003). [19] 莊達人,VLSI,高立出版社 .pp.372-376, (1997)zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/4048-
dc.description.abstract中文摘要 本論文主要研究以濕式蝕刻方法來粗化具鎳金屬小球自然光罩之P型氮化鎵表面,針對蝕刻製程參數的探討來尋求最佳的表面粗化,以有效提升氮化鎵發光二極體之外部取光效率。在製作自然光罩的實驗設計上,我們針對鎳金屬島狀小球當光罩的薄膜成核兩個重要的參數作探討,分別為:(1) 薄膜厚度、(2) 熱處理時間。在P型氮化鎵的濕蝕刻製程中使用磷酸為蝕刻溶液,而經由濕式蝕刻之參數調整,可有效提升發光二極體外部之光取出效率,而減少光的全反射,實驗結果顯示氮化鎵發光二極體在正常工作電流20 mA,其工作電壓可維持在3.1 V,而增加了28%的出光效率。 我們進一步研究氮化鎵發光二極體之光電特性及封裝後之輸出功率發現,當原子力顯微鏡觀察表面粗糙度從60 nm變化為124 nm時,氮化鎵發光二極體在正常工作電流20 mA下之光輸出功率可從14.1%增加到20.2%。再經老化壽命可靠性測試結果顯示,在注入電流20 mA下氮化鎵發光二極體經過504個小時,溫度在85°C的環境下,其元件的亮度和順向電壓並能保持在基本值衰減的20%範圍以內,這些結果顯示以自然光罩進行表面粗化對提升氮化鎵發光二極體之外部取光效率具實用性。zh_TW
dc.description.abstractAbstract This thesis describes the surface texturization of p-GaN surface using a combination of Ni natural lithography and wet etching techniques. Various etching parameters for the GaN surface have been attempted to enhance the light extraction efficiency of the GaN LEDs. To prepare a Ni natural mask, the nucleation and grain growth process of the Ni metallic islands on the p-GaN surface should take the Ni film thickness and heat treatment time into account. The H3PO4 solution was used the p-GaN surface. In our experimental range, the optimum surface-textured GaN LED showed a forward voltage of 3.1 V (@20 mA) with an improvement in the light extraction of about 28%. It was found that the surface roughness of the p-GaN surface has a large effect on the LED light output. When the surface roughness of p-GaN increased from 60 to 124 nm, the output power of the GaN LED increased from 14.1 to 20.2% under an injection current of 20 mA. A prime concern of the surface-textured LEDs is their reliability issues. Under optimum etching conditions, we have found that the LED samples can maintain the performance degradation below 20% for 504 hours at 85C. These results indicate that the light extraction efficiency of the GaN LED can be greatly improved using a combination of Ni natural lithography and surface texturing techniques.en_US
dc.description.tableofcontents目錄 審核頁 授權頁 誌謝………………………………………………………………………i 摘要…………………………………………………………………ii Abstract……………………………………………………iii 目錄……………………………………………………………………iv 表目錄……………………………………………………………………v 圖目錄……………………………………………………………vi 第一章 緒論 1-1 發光二極體之演進................................1 1-2 現有發光二極體外部量子效率之現狀......................2 1-2-1 有表面織狀結構或粗糙面………… 3 1-2-2 使用厚的窗口層作電流分佈………………………3 1-2-3 半圓形球面及掩埋半圓柱鏡面……………………4 1-2-4 幾何形狀改變之結構………………………………4 1-3 研究動機……………………………………………………5 第二章 發光二極體相關理論模型簡介 2-1 發光二極體之光取出與發光效率之計算............6 2-2 氮化鎵二極體光取出模型............................9 2-3 光取出之研究.....................................10 2-3-1 Snell’s law...............................10 2-3-2 本論文的研究方法...........................11 2-3-3 退火熱處理...............................11 第三章 氮化鎵發光二極體元件製作 3-1 前言......................................13 3-2 氮化鎵發光二極體元件製作...................13 3-2-1 晶片之結構..............................13 3-2-2 晶片之清洗..................13 3-2-3 蒸鍍Ni、退火熱處理..........................14 3-2-4 蒸鍍氧化銦錫薄膜及沉積阻擋層.................15 3-2-5 平台蝕刻.....................................15 3-2-6 蝕刻透明導電層...............................16 3-2-7 高溫合金..........................16 3-2-8 電極製作...................................16 3-2-9 沉積保護層..............................17 . 3-2-10 低溫合金..............17 3-3 切割、崩裂............................17 3-4元件打線與封裝.............................18 3-5 元件特性量測………………………………………18 3-6 儀器介紹……………………………………………………18 第四章 實驗結果與討論 4-1 前言.............................................22 4-2 對不同密度之金屬島狀小球成長於p-GaN 表面之探討.....22 4-3 針對相同蝕刻條件下於粗化p-GaN LEDs 之金屬島狀小球表面之探討............................24 4-3-1 調變不同膜厚、不同相同熱處理溫度參數分析表面粗糙度.....................................24 4-3-2 AFM 分析..........................25 4-4 p-GaN LEDs 光電特性量測.....26 4-4-1 光強度分析.......................26 4-4-2 電流-電壓特性.................26 4-4-3 電流-輸出功率.....................27 4-4-4 ITO/GaN 光場分佈...........28 4-4-5 ITO/GaN 壽命測試..............28 第五章 結論.................29 參考文獻...............31zh_TW
dc.language.isoen_USzh_TW
dc.publisher精密工程學系所zh_TW
dc.relation.urihttp://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-0502200714332400en_US
dc.subjectGaNen_US
dc.subject氮化鎵zh_TW
dc.subjectNatural Lithographyen_US
dc.subjectSurface Texturingen_US
dc.subjectLight-Emitting Diode (LED)en_US
dc.subject自然光罩zh_TW
dc.subject表面粗化zh_TW
dc.subject發光二極體zh_TW
dc.title以表面粗化技術提升氮化鎵發光二極體特性之研究zh_TW
dc.titleImproved Light Output and Electrical Performance of GaN-Based Light-Emitting Diodes by Surface Rougheningen_US
dc.typeThesis and Dissertationzh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeThesis and Dissertation-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1en_US-
item.grantfulltextnone-
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