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標題: 利用圖案化藍寶石基板成長氮化銦鎵系藍光發光二極體
Grown the GaInN blue LED on the patterned sapphire substrates
作者: 程志青
Cheng, Chih-Ching
關鍵字: LED;發光二極體;Patterned Sapphire;MOCVD;GaN;FACELO;圖案化基板;有機金屬化學氣相沉積法;氮化鎵;成長面向控制橫向磊晶技術
出版社: 精密工程學系所
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本論文利用有機金屬化學氣相沉積法在圖案化藍寶石基板上成長氮化鎵磊晶薄膜,研究成長溫度與壓力對氮化鎵磊晶膜表面形態之影響,並應用成長面向控制橫向磊晶技術( facet-controlled epitaxial lateral overgrowth, FACELO)在圖案化藍寶石基板上成長氮化鎵發光二極體結構,控制在圖案化基板凹槽與氮化鎵間形成(1).完全填滿基板孔洞之發光二極體結構;(2).具空氣基板孔洞之發光二極體結構,並與傳統無圖案基板發光二極體比較,並探討圖案化基板與磊晶膜間產生之空孔形成機制與對發光二極體之光電特性影響。

The morphology of GaN epitaxial layers on patterned sapphire substrates were study by varying the growth temperatures and reactor pressures in a Metalorganic chemical vapor deposition system (MOCVD). Two kinds of interface morphology between GaInN-LED epitaxial layers and dot-patterned sapphire substrates were grown by the FACELO (facet-controlled epitaxial lateral overgrowth) technique. The first LED structure was grown without air gap between the GaN and the patterned sapphire. And the second one has many large air-gaps between the GaN and the patterned sapphire. The growth mechanism, optical and electric property of these GaInN-LED structures on patterned and non-patterned sapphire substrates were discussed in this thesis.
其他識別: U0005-1008200611415200
Appears in Collections:精密工程研究所

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