Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4099
DC FieldValueLanguage
dc.contributor武東星zh_TW
dc.contributor林招松zh_TW
dc.contributor.advisor洪瑞華zh_TW
dc.contributor.advisorRay-Hua Horngen_US
dc.contributor.author游尚樺zh_TW
dc.contributor.authorYou, Shang-Huaen_US
dc.contributor.other中興大學zh_TW
dc.date2007zh_TW
dc.date.accessioned2014-06-06T06:27:01Z-
dc.date.available2014-06-06T06:27:01Z-
dc.identifierU0005-1907200621223500zh_TW
dc.identifier.citation[1] P. R. Scheeper, V. D. Donk, W. Olthuis and P. Bergveld, “A review of silicon microphones,” Sensors and Actuators, vol. 44, pp. 1-11, 1994. [2] G. M. Sessler, “New acoustic sensors,” Sensors and Actuators, vol. 25-27, pp. 323-330, 1991. [3] M. Royer, J. O. Holmen, M. A. Wurm, O. S. Aadland and M. Glenn, “ZnO on Si integrated acoustic sensor,” Sensor and Actuators, vol. 4, pp. 357-362, 1983. [4] R. Schellin and G. Hess, “A silicon subminiature microphone based on piezoresistive polysilicon strain gauges,” Sensors and Actuators, vol. 32, pp. 555-559, 1992. [5] D. Hohm and R. Gerhard-Multhaupt, “Silicon-dioxide electret transducer,” Journal of The Acoustical Society America, vol. 75, 4, pp. 1297-1298, 1984. [6] A. J. Sprenkels, R. A. Groothengel, A. J. Verloop and P. Bergveld, “Development of an electret microphone in silicon,” Sensors and Actuators, vol. 17, pp. 509-512, 1989. [7] P. R. Scheeper, V. D. Donk, W. Olthuis and P. Bergveld, “Fabrication of silicon condenser microphone using single wafer technology,” Journal Microelectromechanical Systems, vol. 1, 3, 1992. [8] P. R. Scheeper, W. Olthuis and P. Bergveld, “The design, fabrication, and testing of corrugated silicon nitride diaphragms,” Journal Microelectromechanical Systems, vol. 3, 1, pp. 36-42, 1994. [9] P. C. Hsu, C. H. Mastrangelo, and K. D. Wise, “A high sensitivity polysilicon diaphragm condenser microphone,” Center for Integrated Sensors and Circuits, Department of Electrical Engineering and Computer Science, pp. 25-29, 1998. [10] W. Kuhnel and G. Hess, “A silicon condenser microphone with structured backplate and silicon nitride membrane,” Sensors and Actuators, vol. 30, pp. 251-258, 1992. [11] M. Pedersen, W. Olthuis and P. Bergveld, “A polymer condenser microphone on silicon with on-chip CMOS amplifier,” International Conference Solid-State Sensors and Actuators, pp. 445-446, 1997. [12] W. H. Hsieh, T. Y. Hsu and Y. C. Tai, “A micromachined thin-film teflon electret microphone,” International Conference Solid-State Sensors and Actuators, pp. 425-428, 1997. [13] M. Gayford, Microphone engineering handbook, 1994. [14] J. J. Bernstein and J. T. Borenstein, “A micromachined silicon condenser microphone with on-chip amplifier,” Technical Digest of the Solid State Sensors and Actuators Workshop, pp. 239-243, 1996. [15] Michael Pedersen, A polymer condenser microphone realised on silicon containing preprocessed integrated circuits, 1997. [16] K. B. Sundaram, R. E. Sah, H. Baumann, K. Balachandran, and R. M. Todi, “Wet etching studies of silicon nitride thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition,” Microelectronic Engineering, vol. 70, pp. 109–114, 2003. [17] 邢泰剛, 微機電系統技術與應用, 行政院國家科學委員會精密儀器發展中心出版, pp. 544-562, 民國92年. [18] J. L. Vossen, W. Kern, Thin film processes, 1978. [19] 許池榮, 組合式微型麥克風元件製程技術之研發, 國立中興大學精密工程研究所碩士論文, 94年. [20] 袁宗廷, 高感度電容式矽微麥克風之研製, 國立中興大學精密工程研究所碩士論文, 94年. [21] 胡辜昱, 單晶片電容式麥克風之設計與研發, 國立中興大學精密工程研究所碩士論文, 94年. [22] 陳建盛, 矽晶麥克風之研製, 國立交通大學電機與控制工程系碩士論文, 88年. [23]http://www.starmicronics.com/components/components_pages/prod_series/maa-03a-l_series.html.zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/4099-
dc.description.abstract本論文研究目的主要以嶄新的脫離技術與磁性批次收集研製高感度的組合式駐極體矽微麥克風,其組成元件是由振膜結構、空間層、駐極體背板所構成,本研究主要是發展低成本、易移除之犧牲層,脫離後可得批次收集、高良率與高性能之振膜結構。 因考量單晶片與雙晶片麥克風會遭遇到部份問題,於是以犧牲層所發展的脫離技術製作振膜結構。犧牲層以低成本、易移除且脫離之後振膜結構具有高良率為選用條件,於是評估多種犧牲層之可行性,並透過實作過程所遭遇到的問題並逐步改善振膜製程之結構,故選用乾氧化二氧化矽做為犧牲層,氧化一片四吋矽晶圓花費NT 200元、脫離過程花費五小時將犧牲層掏空且脫離後良率可達九成以上,並搭配磁力收集技術可一次完整收集晶圓上所有已脫離之振膜結構並進行封裝製程,經脫離後之振膜結構於1 kHz之取樣頻率並由駐極體材料所提供的-175 V偏壓下所量測可得到-32.4 dBV/Pa的增益輸出,全感度約為25.12 mV/Pa,遠遠高於市面之麥克風性能。良率由原本最初實驗的一成提升至九成以上,犧牲層之成本與感應式耦合電漿化學氣相沈積系統所沈積之氮化矽相較起來僅需三分之一的成本,整體而言,選用四吋晶圓做為基材,平均一顆組合式駐極體麥克風成本為NT 7元。zh_TW
dc.description.abstractIn this paper we had developed a high sensitivity assembly Si-based electret condenser microphone using wafer transfer technology and magnetic force collection method. An electret microphone mainly consists of three parts, a diaphragm, a spacer and an electret backplate. We developed a wafer transfer technology which the sacrificial layer can be remove rapidly as well as low cost of it. The result shows a high performance electret condenser microphone with excellent yields can be achieved through wafer transferring and batch collection methods. The single chip condenser microphone presented on the literatures appears some obstacles such as high cost and complicated processes. Those problems could be overcome since we developed the wafer transfer technology. A good sacrificial layer must contain some characteristics, such as rapid removing, low cost and high yields after wafer transferred. There are many sacrificial layer materials we had chosen from experiments. According to our experiments, the thermal silicon oxidation is a good sacrificial layer which could be released in five hours. It costs only NT 200元 per piece to grow a 4˝ silicon oxidation wafer. The yields remain approximately 90 percent after wafer transferred. Moreover, the diaphragm chips on whole wafer could be totally transferred to another carrier wafer by introducing the magnetic force so as to package it easily. The measured frequency response at 1 kHz was –32.4 dBV/Pa as a reference of 0 dB(1 V/Pa), and the total sensitivity was 25 mV/Pa. The bias voltage provided from the electret material is -175 V. The yields have been increased from 10 to 90 ﹪ since we introduced the silicon oxidation material as the sacrificial layer to replace the aluminum ones. The cost of silicon oxidation as a sacrificial layer was 70 % lower than that of ICP-CVD Si3N4 materials. The assembly Si-based electret condenser microphone was fabricated from four inch silicon wafer. The average cost of that is about NT 7元.zh_TW
dc.description.tableofcontents封面 空白頁 書名頁 審核頁 授權頁 誌謝 中文摘要 vi Abstract vii 目錄 viii 表目錄 xi 圖目錄 xii 第一章 緒論 1 1-1 前言 1 1-2 文獻回顧 2 1-3 研究動機與目的 3 第二章 駐極體矽微麥克風之基本原理與設計考量 4 2-1 基本原理 4 2-1-1 靈敏度 5 2-1-2 線性頻率響應 6 2-2 麥克風元件設計考量 6 2-2-1 振膜設計考量 6 2-2-1-1 正向壓力與薄膜中心變形量之間的關係 6 2-2-1-2 振膜結構尺寸說明 7 2-2-1-3 選用良好振膜材質之條件 7 2-2-2 背板設計考量 7 2-2-2-1 音孔之開孔率考量 7 2-2-2-2 背板結構尺寸說明 8 2-2-3 空間層設計考量 8 2-2-4 綜合考量 8 第三章 組合式駐極體矽微麥克風元件製程 9 3-1 麥克風製程規劃 9 3-1-1 振膜製程規劃 9 3-1-1-1 犧牲層選用條件 9 3-1-1-2 振膜材料選用條件 10 3-1-1-3 種晶層選用條件 10 3-1-1-4 振膜框架選用條件 10 3-1-1-5 氧電漿乾蝕刻機制 11 3-1-2 電暈放電之充電機制與設備 11 3-1-2-1 電暈放電充電機制 11 3-1-2-2 電暈放電與表面電位量測設備 11 3-2 振膜製程 12 3-2-1 犧牲層選用Al,多項種晶層 12 3-2-2 犧牲層選用ICP-CVD Si3N4,種晶層選用Cr/Au 13 3-2-3 犧牲層選用SOG,種晶層選用Cr/Au 13 3-2-4 犧牲層選用Thermal SiO2,種晶層選用Cr/Au 14 3-3 背板製程 15 3-4 組合式駐極體矽微麥克風之組合過程 16 第四章 振膜之良率與收集方法改良過程 17 4-1 良率之改良過程 17 4-1-1 犧牲層:Al,種晶層:Cr/Pt 17 4-1-2 犧牲層:Al,種晶層:Pt 17 4-1-3 犧牲層:Al,種晶層:Ti/Au 18 4-1-4 犧牲層:Al,種晶層:Cr/Au 18 4-1-5 犧牲層:ICP-CVD Si3N4,種晶層:Cr/Au 18 4-1-6 犧牲層:SOG,種晶層:Cr/Au 19 4-1-7 犧牲層:Thermal SiO2,種晶層:Cr/Au 19 4-2 振膜收集方法改良過程 20 4-2-1 連接晶粒收集方法 20 4-2-2 磁力網收集方法 20 4-2-3 橡膠磁鐵收集方法 22 4-2-3-1 轉移介質使用鋁箔紙 22 4-2-3-2 轉移介質使用保鮮膜 23 4-2-3-3 轉移介質使用矽晶圓 24 第五章 振膜製程所遭遇問題與解決方法 26 5-1 去除光阻JSR之過程,Cr/Pt便部分剝離 26 5-2 Cr/Pt被氫氣剝離與HCl蝕刻 26 5-3 振膜上有殘留之光阻JSR 27 5-4 去除光阻JSR後,電鍍Ni與基材分離 27 5-5 Al當種晶層,電鍍之後產生許多顆粒狀之Ni 27 5-6 O2電漿乾蝕刻PI 後產生龜裂之現象 28 5-7 脫離過程Ti/Au被氫氣剝離 28 5-8 利用多種Al蝕刻液,蝕刻做為犧牲層之Al 28 5-8-1 1 NaOH, 4 H2O 29 5-8-2 FeCl3 29 5-8-3 H3PO4 29 4-8-4 最適合本論文之Al蝕刻液 30 5-9 使用BOE與HCl之混合溶液脫離振膜結構 30 5-10 振膜上Ni框架開孔造成感度下降 30 5-11 Pt和PI之附著性不佳,脫離過程Pt被氫氣剝離 31 5-12 因光罩設計不佳,而導致電鍍後振膜上有Ni 31 5-13 脫離過程使用濕蝕刻HF會破壞結構 31 5-14 脫離過程使用乾蝕刻HF無法有效脫離 32 5-15 在HCl脫離前塗佈光阻以保護Cr 32 第六章 實驗結果與討論 33 6-1 頻率響應特性量測與結果分析 33 6-2 具高性能、高良率、批次收集之振膜結構建立方法 34 6-2-1 高良率建立方法 34 6-2-2 高性能建立方法 34 6-2-3 批次收集之建立方法 35 第七章 結論與未來展望 36 參考文獻 38zh_TW
dc.language.isoen_USzh_TW
dc.publisher精密工程學系所zh_TW
dc.relation.urihttp://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-1907200621223500en_US
dc.subject駐極體麥克風zh_TW
dc.subjectelectret condenser microphoneen_US
dc.subject犧牲層zh_TW
dc.subject振膜zh_TW
dc.subject脫離技術zh_TW
dc.subject頻率響應zh_TW
dc.subjectsacrificial layeren_US
dc.subjectdiaphragmen_US
dc.subjectwafer transfer technologyen_US
dc.subjectfrequency responseen_US
dc.title適用於組合式駐極體矽微麥克風之犧牲層技術之研究zh_TW
dc.titleA Study of Sacrificial Layer Technology for the Fabrication of Assembly Si-based Electret Condenser Microphonesen_US
dc.typeThesis and Dissertationzh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeThesis and Dissertation-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1en_US-
item.grantfulltextnone-
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