Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4103
標題: 含三氧化鎢薄膜和感測電路之整合型微濕度感測器
Micro Humidity Sensors integrated with WO3 films and Circuits
作者: 陳富松
Chen, Fu-Song
關鍵字: humidity sensor;濕度感測器;tungsten oxide;CMOS;sol-gel;三氧化鎢;溶膠凝膠
出版社: 精密工程學系所
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摘要: 
本文以COMS標準製程製作整合電路之濕度感測器,使用溶膠凝膠法製備三氧化鎢感濕薄膜塗佈於感測結構上,完成一為濕度感測器的製作。在薄膜煅燒溫度上,使用150℃低溫煅燒來產生一靈敏度較高的感濕薄膜。當感濕薄膜吸附水汽時,電阻將會往下降,而此時的多晶矽感測層內的電洞透過氧化矽層的阻絕,受到感濕薄膜吸附水汽所產生電子的吸附,導致電子遷移率下降,電阻上升。於是感濕的過程中,隨著多晶矽的電阻上升,在電路放大輸出的方面將隨著濕度上昇而增加。
此研究最主要目的為使用低成本的感濕薄膜,整合於電路結構上讀出訊號。感測區的面積為150×200 μm2,感測的輸出變化在500 mV輸入電壓,溫度25℃下,對於25~ 85 %RH的輸出電壓變化量為200mV左右,靈敏度為6.66 mV/%RH/V;在1000 mV輸入電壓,溫度25℃,對於25~ 85 %RH的輸出電壓變化量為380 mV,靈敏度為6.33 mV/ %RH/V。由於電阻式的感濕薄膜容易受溫度影響,為了達到標準化的感濕曲線,對晶片上的加熱器施與加熱偏壓,使之整體晶片的溫度固定來阻絕外在的環境溫度。阻絕溫度方面的量測,經實驗後證實10 V的加熱偏壓可以隔絕60℃下的外界溫度影響。

This study investigates the fabrication of humidity sensors integrated with micro heater and readout circuit using the commercial 0.35μm CMOS process. This sensing film of humidity sensors is tungsten trioxide that is prepared by a sol-gel process and calcined at 150℃ for 3 hr. The micro heater is employed to provide a stable temperature to the humidity sensor, which can avoid the influence of ambient temperature. The post-process uses etchant to etch sacrificial layers to expose the polysilicon line, and then the sensing film is coated on the polysilicon line. The humidity sensors, which are resistive type, change in resistance when the sensing film absorbs or desorbs vapor water. The circuits are utilized to convert the resistance variation of the humidity sensor into the voltage output.
Experimental results show that the sensitivity of sensor is 6.33 mV/ %RH/V at 25℃ under the humidity range of 25-85 % RH, and the micro heater can produce the temperature of about 60℃ when supplying the voltage of 10 V to the heater.
URI: http://hdl.handle.net/11455/4103
其他識別: U0005-2108200613032300
Appears in Collections:精密工程研究所

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