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標題: 藉由視窗層粗化以提昇磷化鋁銦鎵發光二極體外部量子效率之研究
Investigation of Improving External Quantum Efficiency of AlGaInP-based LEDs by Roughened Window Layer
作者: 梁永隆
Liang, Yung-Lung
關鍵字: surface-textured;表面粗化;AlGaInP LED;Polystyrene sphere;磷化鋁銦鎵發光二極體;聚苯乙稀奈米球
出版社: 精密工程學系所
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經由感應式耦合電漿蝕刻系統蝕刻後,其p-GaP表面有點類似圖形轉移而呈現出p-GaP奈米柱,利用光學模擬軟體建立經由不同ICP蝕刻參數的模型並分析光取出率的差異性,其模擬結果為p-GaP最佳的蝕刻深度約為600 nm,而直徑約為300~320 nm。
最後量測元件之光電特性及封裝後之輸出功率,在最佳的ICP蝕刻條件下,經由封裝後並注入20 mA之電流量測原始以及具奈米柱之p-GaP/AlGaInP/GaAs LEDs之輸出功率分別為1.64與2.15 mW,因此可知具奈米柱之p-GaP/AlGaInP/GaAs LEDs可使輸出功率增加約30%。

In conventional AlGaInP light-emitting diodes, the external efficiency is limited by total internal reflection at the p-GaP/air interface. The refractive indexes of p-GaP and air are 3.5 and 1.0, respectively. In this study, the surface roughened p-GaP was obtained by natural lithography technique with polystyrene spheres as the mask under different ICP-RIE etching condition. The scanning electron microscope and atomic force microscope were used to analysis the textured of p-GaP surface.
After ICP-RIE etching, the surface morphology of the p-GaP surface also appears nano-pillars. In order to analyzed the light extraction efficiency from surface-textured p-GaP/AlGaInP/GaAs LEDs quantitatively, employ a Trace-Pro simulation of the photon trajectories under different ICP-RIE etching condition,the simulation results of optimization textured depth with nano-pillars diameter are about 600 nm and 300 nm.
The output power of the p-GaP/AlGaInP/LEDs with and without surface texturing is respectively 1.64 and 2.15 mW at 20 mA. The LEDs fabricated using the surface-textured p-GaP surface produced an output power that exceeded that of the original LED by about 30% at 20 mA.
其他識別: U0005-2508200616313200
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