Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4107
DC FieldValueLanguage
dc.contributor戚務聖zh_TW
dc.contributor富振華zh_TW
dc.contributor武東星zh_TW
dc.contributor.advisor洪瑞華zh_TW
dc.contributor.author梁永隆zh_TW
dc.contributor.authorLiang, Yung-Lungen_US
dc.contributor.other中興大學zh_TW
dc.date2007zh_TW
dc.date.accessioned2014-06-06T06:27:02Z-
dc.date.available2014-06-06T06:27:02Z-
dc.identifierU0005-2508200616313200zh_TW
dc.identifier.citation[1] G. B. Stringfellow and M. George Craford, “High brightness light emitting diode,” Academic Press Inc. Boston, pp. 149-161 (1997). [2] R. D. Dupuis and P. D. Dapkus, “Room temperature opearation of GaAlAs/GaAs double heterostructure lasers grown by metalorganic chemical vaper deposition,” Appl. Phys. Lett., vol. 31, pp. 466-468 (1977). [3] S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, “Superbright green InGaN single quantum well structure light emitting diodes,” Jpn. J. Appl. Phys., vol. 34, pp. 1332-1335 (1995). [4] C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, “High performance AlGaInP visible light emitting diodes,” Appl. Phys. Lett., vol. 57, pp. 2937-2939 (1990). [5] D. A. Vanderwater, I. H. Tan, G. E. Hofler, D. C. DeFevere, F. A. Kish, “High brightness AlGaInP light emitting diodes,” IEEE. vol. 85, pp. 1752-1764 (1997). [6] F. A. Kish et al. “Very high efficiency semiconductor wafer bonded tranasparent substrate (AlxGa1-x)0.5In0.5P/GaP light emitting diodes,” Appl. Phys. Lett. vol. 64, pp. 2839-2841 (1994). [7] S. C. Wei et al. “AlGaInP light emitting diodes with mirror substrates fabricated by wafer bonding,” Appl. Phys. Lett. vol. 75, pp. 3054-3056 (1999). [8] N. F. Gardner et al. “1.4 times efficiency improvement in transparent substrate (AlxGa1-x)0.5In0.5P light emitting diodes with thin active regions,” Appl. Phys. Lett. vol. 74, pp. 2230-2232 (1999). [9] H. Sugawara, K. Itaya et al “High brightness InGaInP green light emitting diodes,” Appl. Phys. Lett. vol. 61, pp. 1775-1777 (1992). [10] K. H. Huang etal. “Two fold efficiency improvement in high performance AlGaInP light emitting diodes in the 555~620 nm spectral region using a thick GaP window layer,” Appl. Phys. Lett. vol. 61, pp. 1045-1047 (1992). [11] H. Sugawara, K. Itaya, M. Ishikawa and G. Hatakoshi, “High efficiency InGaAlP visible light emitting diodes,” Jpn. J. Appl. Phys. vol. 31, pp. 2446-2451 (1992). [12] W. N. Carr and G. E. Pittman, “One watt GaAs p-n junction infrared source,” Appl. Phys. Lett. vol. 3, pp. 173-175 (1963). [13] A. R. FrankLin and R. Newman, “Shaped electroluminescent GaAs diodes,” Appl. Phys. Lett. vol. 35, pp. 1153-1155 (1964). [14] M. R. Krames et al. “High power truncated inverted pyramid (AlxGa1-x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett. vol. 75, pp. 2365-2367 (1999). [15] M. Broditsky et al. “Light extraction from optically pumped light-emitting diode by thin slab photonic crystals,” Appl. Phys. Lett. vol. 75, pp. 1036-1038 (1999). [16] 施敏 原著, 黃調元 譯著, “半導體元件物理與製程技術,”第二板, 高立圖書有限公司,台北, 台灣, pp. 104-110 (2002). [17] 施敏 原著, 黃調元 譯著, “半導體元件物理與製程技術,”第二板, 高立圖書有限公司,台北, 台灣, pp. 192-198 (2002). [18] Dieter K. Schroder, “Semiconductor material and device characterization,”pp. 190-195 (1990). [19] V. M. Burmedez, “Study of oxygen chemisorption on the GaN(0001)-(131) surface,” J. Appl. Phys. vol. 80, pp. 1190-1200 (1996). [20] 史光國, “現代半導體發光及雷射二極體材料技術,” 全華科技, (2001). [21] 柳克強, “真空技術與應用,” 行政院國家科學委員會精密儀器發展中心, pp. 511-516 (2002). [22] R. Windisch, “impact of texture enhanced tramission on high efficiency surface textured light emitting diodes,” Appl. Phys. Lett. vol. 79, pp. 2315-2317 (2001).zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/4107-
dc.description.abstract磷化鋁銦鎵發光二極體因p-GaP視窗層折射率為3.5與空氣(n=1)差異太大,而容易形成光的全反射,如此一來發光效率將大幅降低,為了改善此光學特性對發光效率的影響,本論文藉由聚苯乙烯奈米球為自然光罩並經由感應式耦合電漿蝕刻系統蝕刻聚苯乙烯奈米球之間的空隙而達到表面粗化之目的,進而減少光在發光二極體裡全反射的機率,本研究主題為藉由控制不同的ICP蝕刻功率與蝕刻時間,探討p-GaP表面粗糙度對發光亮度之影響。 經由感應式耦合電漿蝕刻系統蝕刻後,其p-GaP表面有點類似圖形轉移而呈現出p-GaP奈米柱,利用光學模擬軟體建立經由不同ICP蝕刻參數的模型並分析光取出率的差異性,其模擬結果為p-GaP最佳的蝕刻深度約為600 nm,而直徑約為300~320 nm。 最後量測元件之光電特性及封裝後之輸出功率,在最佳的ICP蝕刻條件下,經由封裝後並注入20 mA之電流量測原始以及具奈米柱之p-GaP/AlGaInP/GaAs LEDs之輸出功率分別為1.64與2.15 mW,因此可知具奈米柱之p-GaP/AlGaInP/GaAs LEDs可使輸出功率增加約30%。zh_TW
dc.description.abstractIn conventional AlGaInP light-emitting diodes, the external efficiency is limited by total internal reflection at the p-GaP/air interface. The refractive indexes of p-GaP and air are 3.5 and 1.0, respectively. In this study, the surface roughened p-GaP was obtained by natural lithography technique with polystyrene spheres as the mask under different ICP-RIE etching condition. The scanning electron microscope and atomic force microscope were used to analysis the textured of p-GaP surface. After ICP-RIE etching, the surface morphology of the p-GaP surface also appears nano-pillars. In order to analyzed the light extraction efficiency from surface-textured p-GaP/AlGaInP/GaAs LEDs quantitatively, employ a Trace-Pro simulation of the photon trajectories under different ICP-RIE etching condition,the simulation results of optimization textured depth with nano-pillars diameter are about 600 nm and 300 nm. The output power of the p-GaP/AlGaInP/LEDs with and without surface texturing is respectively 1.64 and 2.15 mW at 20 mA. The LEDs fabricated using the surface-textured p-GaP surface produced an output power that exceeded that of the original LED by about 30% at 20 mA.en_US
dc.description.tableofcontents封面 空白頁 書名頁 審核頁 授權書 誌謝 中文摘要 .vi Abstract .vii 目錄 .viii 圖目錄 ..xi 第一章 緒論 1 第二章 發光二極體理論模型簡介 7 2-1 電流電壓特性 7 2-2 金屬與半導體接面之影響 8 2-2-1 金屬/半導體接觸之原理 8 2-2-2 歐姆接觸之原理………………………………………9 2-3 發光二極體之光取出原理及方法…………………………...11 第三章 元件之製作與分析 .15 3-1 前言 .15 3-2實驗設備與原理簡介................................................................15 3-2-1高密度電漿蝕刻系統原理.............................................15 3-2-2感應式耦合電漿蝕刻機.................................................16 3-2-3感應式耦合電漿蝕刻系統反應機制.............................16 3-3 發光二極體元件製作 ...17 3-3-1 試片之磊晶結構 17 3-3-2 試片之清洗 17 3-3-3 平台(Mesa)蝕刻 17 3-3-4 電極之製作.....................................................................18 3-4 表面粗化模型建立 18 3-4-1表面粗糙對發光二極體出光路徑之探討 18 3-4-2 表面粗化流程 19 3-4-3 考慮自然光罩的存留 20 3-5 光學模擬 21 3-5-1前言.................................................................................21 3-5-2模型建立.........................................................................21 3-6 元件切割、打線與封裝 .22 3-7 元件特性 .22 第四章 實驗結果與討論 .23 4-1 前言 .23 4-2不同密度之聚苯乙烯奈米球溶液塗佈於p-GaP表面之探討. ..................................................................................................23 4-3不同蝕刻條件於粗化p-GaP/AlGaInP/GaAs LEDs 之表面探討................................................................................24 4-3-1改變ICP蝕刻參數分析表面粗糙圖形與光學模擬....24 4-3-2改變ICP蝕刻參數分析表面粗糙度............................26 4-4具奈米柱之p-GaP/AlGaInP/GaAs LEDs光電特性量測 27 4-4-1 電流-電壓特性...............................................................27 4-4-2 光強度分析.....................................................................28 4-4-3 具奈米柱之p-GaP/AlGaInP/GaAs LEDs之 光場分佈分析.................................................................29 4-4-4 具奈米柱之發光二極體之外部出光率探討................29 4-5具奈米柱之發光二極體之壽命測試 30 第五章 結論 31 參考文獻 32zh_TW
dc.language.isoen_USzh_TW
dc.publisher精密工程學系所zh_TW
dc.relation.urihttp://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2508200616313200en_US
dc.subjectsurface-textureden_US
dc.subject表面粗化zh_TW
dc.subjectAlGaInP LEDen_US
dc.subjectPolystyrene sphereen_US
dc.subject磷化鋁銦鎵發光二極體zh_TW
dc.subject聚苯乙稀奈米球zh_TW
dc.title藉由視窗層粗化以提昇磷化鋁銦鎵發光二極體外部量子效率之研究zh_TW
dc.titleInvestigation of Improving External Quantum Efficiency of AlGaInP-based LEDs by Roughened Window Layeren_US
dc.typeThesis and Dissertationzh_TW
item.languageiso639-1en_US-
item.openairetypeThesis and Dissertation-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.fulltextno fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
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