Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4119
DC FieldValueLanguage
dc.contributor林明澤zh_TW
dc.contributorMing-Tzer Linen_US
dc.contributor王昭鑫zh_TW
dc.contributorZhao-Xin Wangen_US
dc.contributor.advisor武東星zh_TW
dc.contributor.advisorDong-Sin Wuen_US
dc.contributor.author陳騰勳zh_TW
dc.contributor.authorChen, Teng-Hsunen_US
dc.contributor.other中興大學zh_TW
dc.date2007zh_TW
dc.date.accessioned2014-06-06T06:27:03Z-
dc.date.available2014-06-06T06:27:03Z-
dc.identifierU0005-2807200611301000zh_TW
dc.identifier.citation參考文獻 [1] G. B. Stringfellow, “High Brightness Light-Emitting Diodes”, Academic Press Inc. Boston, pp. 149-219(1997) [2] 游志樸,”半導體材料”,新文京出版社,2003,第六章。 [3] F. A. Kish and R. M. Fletcher, “AlGaInP Light-Emitting Disdes”, in ”High Brightness Light-Emitting Diodes”, Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3938, pp. 2-12 (2000) [4] H. Sugawara, M. Inhakawa, and G. Hatakoshi, “High-Efficiency InGaAlP/GaAs Visible Light-Emitting Diodes” , Conference on Solid State Devices and Materials, pp. 741-742 (1991) [5] H. Sugawara, K. Itaya, H. Nozaki, and G. Hatakoshi,“High-Brightness InGaAlP Green Light-Emitting Diodes”, Appl. Phys. Lett, Vol . 61, pp. 1775-1777(1992) [6] 史光國,”現代半導體發光及雷射二極體材料技術”,2004,第三章,1-89頁。 [7] Z. Huang, C. C. Lin, and D. G. Deppe, “Spontaneous Lifetime and Quantum Efficiency in Light-Emitting Diode Affected by a Close Metal Mirror”, IEEE J. Quantum Electronics, Vol. 29, pp. 2940-2949(1993) [8] 許國鋒,”利用金屬反射基板與透明電極結構進行 AlGaInP 發光二極體外部量子效率改善之研究”, 國立成功大學微電子工程研究所碩士論文,2002。 [9] 黃振東,”LED封裝及散熱基板之現況與發展”,工業材料 231,2006,第70-81頁。 [10] 王建義,”薄膜工程學”,全華科技圖書股份有限公司,2004,第2章,第51-74頁。 [11] 陳錦山,”真空薄膜沈積實驗”,第3-5頁。 [12] 張勁燕,“電子材料”,五南出版社,1999,第184-186頁。 [13] 羅文雄,蔡榮輝,鄭岫盈,”半導體製造技術”,滄海書局, 2004, 第393-503頁。 [14] 施敏,”半導體元件物理與製技術”,第二版,國立交通大學出版 社,2002,第353-357頁。 [15] 趙國興,”電射拉曼光譜對鈀、銠及硫酸鈰反應之研究”,中國文 化大學應用化學研究所碩士論文,2002。 [16] R. A. Young, and R. V. Kalin, ” Scanning Electron Microelectronic Techniques for Characterization of Semiconductor Materials, ” in: Microelectronic Processing: Inprganic Material Characterization, (L. A. Casper, ed.) American Chemical Soc, Sypm. Series 295, Washington, pp. 49-74 (1986)zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/4119-
dc.description.abstract本論文主要係藉由晶粒製程的改變來增加磷化鋁銦鎵四元發光二極體的出光效率,在實驗的第一部份是開發砷化鎵基板移除技術,進一步研製具反射鏡面之銅基板型四元發光二極體,在此製程中必須先在砷化鎵基板上成長一層磷化銦鎵薄膜做為移除砷化鎵基板時之蝕刻阻擋層,並在移除砷化鎵基板之後蒸鍍上金作為金屬反射鏡與歐姆接觸之整面性的N型電極,再電鍍銅厚膜作為四元發光二極體之金屬基板。經由元件(晶粒尺寸:12 mil)量測結果顯示,在正常20 mA的電流下,砷化鎵基板結構的發光亮度為59 mcd,而在使用銅基板結構其發光亮度高達213 mcd;在電流100 mA時,砷化鎵基板結構的發光亮度為249 mcd,而銅基板結構其發光亮度高達869 mcd,亮度約提升3.5~3.6倍,以上結果證明了金屬反射鏡可以改善砷化鎵基板吸光問題,而銅基板因熱導性較佳可在大電流注入時避免元件過熱而降低發光效率。 在實驗的第二部份是開發磷化鎵窗口層之粗化製程,我們是藉由正面金/鈹歐姆接觸電極之熔合製程,使鈹擴散至磷化鎵層,同時利用鈹滲入磷化鎵造成之特殊組成,可形成不均勻之蝕刻阻擋,而在磷化鎵表面形成粗化,我們發現480℃、10分鐘的熔合製程,加上浸泡磷化鎵蝕刻溶液6分鐘,可將四元發光二極體之發光亮度由42 mcd 提升到50 mcd,經由此無光罩粗化製程可將亮度提升18%,明顯提升磷化鋁銦鎵發光二極體之外部量子效率。 關鍵詞:發光二極體、磷化鋁銦鎵、銅基板、金屬反射鏡、表面粗化zh_TW
dc.description.abstractThe motivation of this thesis focuses on the enhancement of light extraction efficiency of AlGaInP light-emitting diodes (LEDs) using various chip processes. One approach is to remove the absorbing GaAs substrate, where a etching stop layer, GaInP, should be employed into the LED structure to insure a complete removing process of the GaAs substrate. After the substrate removing process, a gold reflector was deposited on the entire n-GaAs layer as the ohmic contact, and then an electroplating process was proceeded. A thick copper layer was used as a supporting substrate in the present AlGaInP/mirror/Cu LED structure (chip size: 12x12 mil). Under injection currents of 20 and 100 mA, the AlGaInP LEDs with GaAs absorbing substrates showed only 59 and 249 mcd, respectively. An evident improvement in luminous intensity was achieved in the AlGaInP/mirror/Cu LED samples, where 213 and 869 mcd were obtained at 20 and 100 mA, respectively. Another approach in enhancing the light extraction efficiency of AlGaInP LED was accomplished using a surface roughening process. In this process, the Au(170 nm)/AuBe(260 nm)/Au(170 nm) ohmic contact layers were first deposited on the GaP window layer. After the alloy annealing process (480C for 10 min), the Be atoms will diffuse into the GaP top layer and form non-uniform clusters. The LED samples were then immersed into a mixture 3H3PO4:1H2O2:1H2O solution for 6 min, resulting in a rough GaP surface. The luminous intensity of the AlGaInP LED can increase from 42 to 50 mcd, that is, an 18% enhancement can be achieved via the present non-photolithography surface roughening process. Keywords: LED, AlGaInP, Cu substrate, Reflector, Surface rougheningen_US
dc.description.tableofcontents目錄 第一章 緒論----------------------------------------------1 1.1 前言-------------------------------------------------1 1.2 Ⅲ-Ⅴ族化合物半導體發光二極體材料----------------2 1.3 高亮度高效率發光二極體---------------------------4 1.3.1 電流分佈窗口層-------------------------- -------5 1.3.2 布拉格反射鏡------------------------------------7 1.3.3 金屬反射鏡--------------------------------------7 1.3.4 散熱基板----------------------------------------9 1.4 研究動機---------------------------------------------9第二章 基本原理-----------------------------------------15 2.1 薄膜形成的方法--------------------------------------15 2.1.1 化學氣相成長法---------------------------------15 2.1.2 物理氣相成長法---------------------------------18 2.2 黃光微影製程原理------------------------------------21 2.2.1 黄光微影目的及原理-----------------------------21 2.2.2 黃光微影的步驟---------------------------------22 2.3 蝕刻------------------------------------------------25 2.3.1 濕蝕刻------------------------------------------25 2.3.2 乾蝕刻------------------------------------------26 2.4 歐姆接觸--------------------------------------------28 2.4.1 熱離子發射機制----------------------------------29 2.4.2 穿透電流機制------------------------------------29 第三章 實驗步驟--------------------------------------39 3.1 電鍍銅基板實驗步驟----------------------------------39 3.1.1 高密度電漿乾蝕刻--------------------------------39 3.1.2 蒸鍍正面金屬電極--------------------------------42 3.1.3 電鍍銅基板--------------------------------------44 3.2 磷化鎵無光罩表面粗化實驗步驟------------------------46 3.3 量測分析--------------------------------------------49 3.3.1 掃描式電子顯微之構造原理-----------------------49 第四章 結果與討論------------------------------------59 4.1 銅製程結構之分析------------------------------------59 4.1.1平面型與垂直型銅基板結構I-V特性-----------------59 4.1.2平面型與垂直型銅基板結構Iv特性------------------60 4.1.3平面型砷化鎵基板與垂直銅基板結構I-V特性---------60 4.1.4平面型砷化鎵基板與垂直型銅基板結構之Iv特性------60 4.1.5 銅基板結構熱處理前、後特性----------------------61 4.2 磷化鎵表面粗化之分析--------------------------------61 4.2.1 正面金屬熔合時間對粗化時間之影響----------------62 4.2.2 熔合時間對電性之影響----------------------------64 4.2.3 熔合時間對粗化之影響----------------------------64 第五章 結論------------------------------------------78 參考文獻 -----------------------------------------------80zh_TW
dc.language.isoen_USzh_TW
dc.publisher精密工程學系所zh_TW
dc.relation.urihttp://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2807200611301000en_US
dc.subjectLEDen_US
dc.subject發光二極體zh_TW
dc.subjectAlGaInPen_US
dc.subjectCu substrateen_US
dc.subjectReflectoren_US
dc.subjectSurface rougheningen_US
dc.subject磷化鋁銦鎵zh_TW
dc.subject銅基板zh_TW
dc.subject金屬反射鏡zh_TW
dc.subject表面粗化zh_TW
dc.title以不同晶粒製程改善磷化鋁銦鎵發光二極體出光效率之研究zh_TW
dc.titleImprovements in Light Extraction Efficiency of AlGaInP Light-Emitting Diodes Using Various Chip Processesen_US
dc.typeThesis and Dissertationzh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeThesis and Dissertation-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1en_US-
item.grantfulltextnone-
Appears in Collections:精密工程研究所
Show simple item record
 
TAIR Related Article

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.