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Design of Backside He Cooling Stage and It is Application to Plasma Etching Process
|關鍵字:||Heat Transfer;熱傳遞;Backside He Cooling Stage;Inductively Coupled Plasma(ICP);背氦冷卻基座;感應式耦合電漿||出版社:||精密工程學系所||引用:|| 吳孟奇，洪勝富，連振炘，龔正譯， “半導體元件” ，東華書局 (2001).  李世鴻， “半導體工程原理” ，全威圖書 (1997).  E. Kandler, G. Grabhoff, and K. Drescher, “Characterization of Plasma in an Inductively Coupled High-Dense Plasma Source”, Surf. Coat. Technol., Vol. 74, pp. 539-545 (1995).  O. A. Popov, “High Density Plasma Sources,” Noyes Publications, (1995).  I. Hussla, K. Enke, H. Grunwald, G. Lorenz, and H. Stoll., “In Situ Silicon-Wafer Temperature Measurements During RF Argon-Ion Plasma Etching Via Fluoroptic Thermometry,” J. Phys. D: Appl. Phys., Vol. 20, pp. 889-896 (1987).  J. F. Daviet, and L. Peccoud, “Heat Transfer in Microelectronics Plasma Reactor,” J. Appl. Phys., Vol. 73, No. 3, pp. 1471-1479 (1993).  M. M. Yovanovich, “Thermal Contact Correlations Spacecraft Radiative Transfer and Temperature Control, Progress in Astronautics and Aeronautics,” Vol. 83, edited by T. E. 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Casalnuovo, D. J. Rieger, S. J. Pearton, C. Constantine, C. Barratt, R. F. Karlicek, Jr., C. Tran, and M. Schruman, “Inductively Couple Plasma Etching of GaN”, Appl. Phys. Lett. 8 Vol. 69, pp. 1119-1121 (1996).  S. A. Smith, C. A. Wolden, M. D. Bremser, A. D. Hanser, R. F. Davis, and W. A. Lampert, “High Rate and Selective Etching of GaN, AlGaN, AlN Using an Inductively Couple Plasma”, Appl. Phys. Lett. 71, pp.3631-3633 (1996).||摘要:||
從本論文的研究結果可發現，在基座冷卻結構部分，從分析結果顯示間隙通入氦氣3.5 sccm維持壓力在3 Torr及冰水機設定溫度0°C時，基座溫度可以降低至60°C，而從電漿參數改變顯示，ICP功率所產生的熱能對基座冷卻影響能力最強。在蝕刻藍寶石晶片部分，電漿參數為BCl3在BCl3/Cl2混氣比例占60%，總流量50 sccm，配合ICP功率1000 W、下電極偏壓300 V、工作壓力4 mTorr下，可得到67.5 nm/min之最佳蝕刻速率。
This thesis explores the effect of backside He cooling stage system on the temperature and process of plasma etching. The substrate temperature was risen from the plasma bombardment and high-energy of ion during the plasma process. The higher temperature will cause device damage and influence the etching rate and residual photoresist removal. So, it is important to prevent stage temperature increase during the plasma etching process. It has been reported that the backside He cooling system have satisfactory cooling effect. This study examines the influence of backside He cooling system on the performance of plasma etching. The effect of etching rate on patterned sapphire substrate with and without in backside He cooling in the structure system was also described.
We have designed a backside He cooling stage system and to explore the effect of decreasing the substrate temperature in the plasma etching process. The cooling characteristics were investigated by varying the cooling parameters, such as He flow passes over the gap, He pressure, chiller temperature and plasma recipe. After the backside He cooling stage system has stable cooling function, it was installed in the inductively coupled plasma system (ICP) system to examine the best etching rate of sapphire substrate.
The experimental results indicated that the backside He cooling system could make stage temperature reduced to 60C when the He flow is 3.5sccm, the pressure maintains 3Torr and chiller set 0C. Based on the plasma parameters profile, the data showed that the inductively coupled plasma system power had a significant effect upon the cooling ability. It was also found that the etching sapphire wafer can achieve the best etching rate under the following etching parameters: 60% BCl3 in BCl3/Cl2 mixture, total gas flow of 50 sccm, ICP power of 1000 W, DC-Bias of 300V and work pressure of 4 m Torr.
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