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標題: 基座冷卻結構設計及其在電漿蝕刻製程之應用
Design of Backside He Cooling Stage and It is Application to Plasma Etching Process
作者: 黃勝祥
Huang, Sheng-Siang
關鍵字: Heat Transfer;熱傳遞;Backside He Cooling Stage;Inductively Coupled Plasma(ICP);背氦冷卻基座;感應式耦合電漿
出版社: 精密工程學系所
引用: [1] 吳孟奇,洪勝富,連振炘,龔正譯, “半導體元件” ,東華書局 (2001). [2] 李世鴻, “半導體工程原理” ,全威圖書 (1997). [3] E. Kandler, G. Grabhoff, and K. Drescher, “Characterization of Plasma in an Inductively Coupled High-Dense Plasma Source”, Surf. Coat. Technol., Vol. 74, pp. 539-545 (1995). [4] O. A. Popov, “High Density Plasma Sources,” Noyes Publications, (1995). [5] I. Hussla, K. Enke, H. Grunwald, G. Lorenz, and H. Stoll., “In Situ Silicon-Wafer Temperature Measurements During RF Argon-Ion Plasma Etching Via Fluoroptic Thermometry,” J. Phys. D: Appl. Phys., Vol. 20, pp. 889-896 (1987). [6] J. F. Daviet, and L. Peccoud, “Heat Transfer in Microelectronics Plasma Reactor,” J. Appl. Phys., Vol. 73, No. 3, pp. 1471-1479 (1993). [7] M. M. Yovanovich, “Thermal Contact Correlations Spacecraft Radiative Transfer and Temperature Control, Progress in Astronautics and Aeronautics,” Vol. 83, edited by T. E. Horton, AIAA, New York (1982). [8] Kurt A. Olson, David E. Kotecki, and Anthony J. Ricci, “Characterization Modeling and Design of an Electrostatics Chuck with Improved Wafer Temperature Uniformity,” United States Patent 5675471 (1997). [9] Hong ching Shan, Bryan Y. Pu, Hua Gao, Kuang Han Ke, J. Lewis, M. Welch, and C. Deshpandey, “Process Kit and Wafer Temperature Effects on Dielectric Etch Rate and Uniformity of Electrostatic Chuck,” J. Vac. Sci. Technol. B, Vol. 14, No.1, pp. 521-526, (1996). [10] Hee Hwan Choe, “Basic Study of A Glass Substrate in Dry Etching System,” Journal of the Korean Physical Society, Vol. 48, No. 5, pp. 982-984 (2006). [11] Mei Sun, C. Gabriel, “Direct Wafer Temperature Measurements for Etch Chamber Diagnostics and Process Control,” IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings, pp. 134-139 (2002). [12] N. Nelson-Fitzpatrick, K. Westra, P. Li, S. McColman, N. Wilding, and S. Evoy, “Fabrication of Nanoelectromechanical Resonators Using a Cryogenic Etching Technique,” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 24, No. 6, pp. 2769-2771 (2006). [13] M. Klick, M. Bernt, “Microscopic Approach to an Equation for The Heat Flow Between Wafer and E-chuck,” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 24, No. 6, pp. 2509-2517 (2006). [14] K. Denpoh, “Modeling of Rarefied Gas Heat Conduction Between Wafer and Susceptor,” IEEE Transactions on Semiconductor Manufacturing, Vol. 11, Issue 1, pp. 25-29 (1998). [15] Yoshihisa Iba, Fumiaki Kumasaka, Hajime Aoyama, Takao Yaguchi, and Masaki Yambe, “Pattern Etching of Ta X-ray Mask Absorber on SiC Membrane by Inductively Couple Plasma,” Japanese Journal of Applied Physics Vol. 37, L824-L826 (1998). [16] P. M. Banks, “Plasma Temperatures During Reactive Ion Etching,” Microelectronic Engineering, Vol. 11, No. 1-4, pp. 603-606 (1990). [17] M. F. Laudon, K. A. Thole, R. L. Engelstad, D. J. Resnick, K. D. Cummings, and W. J. Dauksher, “Thermal Analysis of an X-ray Mask Membrane in a Plasma Environment,” Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, Vol. 13, Issue 6, pp. 3050-3054 (1995). [18] E. J. Weisbrod, W. J. Dauksher, D. Zhang, S. Rauf, P. J. S. Mangat, P. L. G. Ventzek, K. H. Smith, S. B. Clemens, C. J. Martin and R. L. Engelstad, “Thermal Modeling of Extreme Ultraviolet and Step and Flash Imprint Lithography Substrates During Dry Etch,” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No 6, pp. 3047-3052 (2002). [19] Calvin T. Gabriel, “Wafer Temperature Measurements During Dielectric Etching in a MERIE Etcher,” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No 4, pp. 1542-1547 (2002). [20] 龍文安,“積體電路微影製程”,高立圖書有限公司 (1998). [21] 羅正忠,張鼎張,“半導體製程技術導論”,台灣培生教育出版有限公司 (2002). [22] 施敏 原著,黃調元譯,“半導體元件物理與製作技術”,交大出版社 (2002). [23] D. L. Flamm, G. K. Herb, “Plasma Etching Technology”, An Overview, Academic Press, Inc., (1989). [24] 葉孟欣,國立交通大學碩士論文 (2002). [25] L. E. Samuels, “Metallographic Polishing by Mechanical Methods”, 3rd Edition. [26] X. Dongzhu, Z. Dezhang, P. Haochang, X. Hochang, X. Hongjie, R. Zongxin, “Generation of Phonons in High-Power Ferromagnetic Resonance Experiments”, J. Phys. Appl. Phys. Vol. 31, pp.1647-1656 (1998). [27] J. W. Kim, Y. C. Kim, W. J. Lee, “Reactive Ion Etching Mechanism of Plasma Enhanced Chemically Vapor Deposited Aluminum Oxide Film in CF4/O2 Plasma”, J. Appl. Phys. Vol. 78, pp. 2045-2049 (1995). [28] E. Kandler, G. Grabhoff, and K. Descher, “Characterization of Plasma in an Inductively Coupled High-Dense Plasma Source”, Surf. Coat. Technol. Vol. 74, pp. 539-545 (1995). [29] M. A. Lieberman, and A. J. Lichtenberg, “Principles of Plasma Discharges and Materials Processing”, John Wiley & Sons Inc, (1994). [30] 張勁燕,“半導體製程設備”,五南出版有限公司 (2002). [31] Joseph C. Martz, Dennis W. Hess, and Eugene E. Petersen “A Generalized Model of Heat Effects In Surface Reactions. II. Application to Plasma Etching Reactions” J. Appl. Phys. Vol. 72, pp. 3289-3293 (1992). [32] Y. H. Lee, H. S. Kim, and G. Y. Yoem, “Etch Characteristics of GaN Using Inductively Coupled Cl2/Ar and Cl2/BCl3 Plasmas”, J. Vac. Sci. Technol. Vol. 16, pp. 1478-1482 (1998). [33] J. Etrillard, F. Heliot, P. Ossart, M. Juhel, and G. Patriarche, “Sidewell and Surface Induced Damage Comparison between Reactive Ion Etching and Inductive Plasma Etching of InP Using a CH4/H2/O2 Gas Mixture”, J. Vac. Sci. Technol. Vol. 14, pp. 1056-1061 (1996). [34] R. J. Shul, G. B. McClellan, S. A. Casalnuovo, D. J. Rieger, S. J. Pearton, C. Constantine, C. Barratt, R. F. Karlicek, Jr., C. Tran, and M. Schruman, “Inductively Couple Plasma Etching of GaN”, Appl. Phys. Lett. 8 Vol. 69, pp. 1119-1121 (1996). [35] S. A. Smith, C. A. Wolden, M. D. Bremser, A. D. Hanser, R. F. Davis, and W. A. Lampert, “High Rate and Selective Etching of GaN, AlGaN, AlN Using an Inductively Couple Plasma”, Appl. Phys. Lett. 71, pp.3631-3633 (1996).
從本論文的研究結果可發現,在基座冷卻結構部分,從分析結果顯示間隙通入氦氣3.5 sccm維持壓力在3 Torr及冰水機設定溫度0°C時,基座溫度可以降低至60°C,而從電漿參數改變顯示,ICP功率所產生的熱能對基座冷卻影響能力最強。在蝕刻藍寶石晶片部分,電漿參數為BCl3在BCl3/Cl2混氣比例占60%,總流量50 sccm,配合ICP功率1000 W、下電極偏壓300 V、工作壓力4 mTorr下,可得到67.5 nm/min之最佳蝕刻速率。

This thesis explores the effect of backside He cooling stage system on the temperature and process of plasma etching. The substrate temperature was risen from the plasma bombardment and high-energy of ion during the plasma process. The higher temperature will cause device damage and influence the etching rate and residual photoresist removal. So, it is important to prevent stage temperature increase during the plasma etching process. It has been reported that the backside He cooling system have satisfactory cooling effect. This study examines the influence of backside He cooling system on the performance of plasma etching. The effect of etching rate on patterned sapphire substrate with and without in backside He cooling in the structure system was also described.
We have designed a backside He cooling stage system and to explore the effect of decreasing the substrate temperature in the plasma etching process. The cooling characteristics were investigated by varying the cooling parameters, such as He flow passes over the gap, He pressure, chiller temperature and plasma recipe. After the backside He cooling stage system has stable cooling function, it was installed in the inductively coupled plasma system (ICP) system to examine the best etching rate of sapphire substrate.
The experimental results indicated that the backside He cooling system could make stage temperature reduced to 60C when the He flow is 3.5sccm, the pressure maintains 3Torr and chiller set 0C. Based on the plasma parameters profile, the data showed that the inductively coupled plasma system power had a significant effect upon the cooling ability. It was also found that the etching sapphire wafer can achieve the best etching rate under the following etching parameters: 60% BCl3 in BCl3/Cl2 mixture, total gas flow of 50 sccm, ICP power of 1000 W, DC-Bias of 300V and work pressure of 4 m Torr.
其他識別: U0005-0502200813410500
Appears in Collections:精密工程研究所

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