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標題: 氧化銦錫奈米晶格陣列結構之製備技術研究
Fabrication of the indium and tin oxide crystalline nanostructure array
作者: 陳和青
Chen, He-Tsing
關鍵字: 氧化銦錫;ITO;陽極氧化鋁;AAO
出版社: 精密工程學系所
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本研究提出以陽極氧化鋁膜為基材,分別將陽極氧化鋁模板正反面浸泡於30wt%之磷酸溶液,進行表面處理。正面蝕刻乃是將孔洞擴大之擴孔處理,當進行濕蝕刻時會因應力集中之差異導致蝕刻不均而生成尖銳孔洞形貌;背面蝕刻則是於去除金屬鋁後進行,主要是針對阻障層進行表面處理。接著以RF射頻濺射技術於3D奈米結構模板上濺鍍一層3D奈米結構氧化銦錫薄 (Indium Tin Oxide, ITO),再經由退火製程改良ITO薄膜之物理特性,以場發射電子顯微鏡觀察ITO薄膜試片之表面形貌,以X光能量分散儀分析ITO之組合成分,以Probe Station量測ITO薄膜之電性。

In this research, fabrication of crystalline nanobaskets indium tin oxide (ITO) electrode shaped by anodic aluminum oxide (AAO) template for better electron conduction is presented. Two kinds of template by respectively immersing the front side and the barrier-layer side of an AAO film into a 30 wt% phosphoric acid solution were prepared first. The front side etching was a pore widening process, resulting in a rugged and sharp-looking AAO template due to deviations of the stress concentration on the AAO film. The barrier-layer side etching was to modify the surface of the barrier layer such that a contrasting surface was obtained. ITO films were then deposited on both two kinds of porous AAO templates using RF magnetron sputtering.
The sputter-coated ITO films were characterized by field emission scanning electron microscopy (FESEM) to illustrate the nanobasket morphologies. Compositions of the ITO films were characterized by energy dispersive X-ray (EDS) analysis. X-ray diffraction (XRD) analysis was conducted to confirm the crystallinity. The crystallinity can be enhanced by annealing at 300℃. Although the conductivity of the ITO nanobasket film is relatively larger than that of the conventional ITO thin film, the harvest efficiency can be tremendously increased due to the nanobasket structure that enables most of the photoexcited electrons to reach their nearest electrodes before dying out. The presented ITO nanobasket films can be further used as a more effective electrode material for photovoltaics such as the dye-sensitized solar cells (DSSC).
其他識別: U0005-1307200711403500
Appears in Collections:精密工程研究所

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