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Design and Verification of Vertical Hydride Vapor-Phase Epitaxy Reactor
|關鍵字:||氫化物氣相磊晶;HVPE;反應腔體;氮化鎵;計算流體力學;Reactor;GaN;CFD||出版社:||精密工程學系所||引用:|| G. Attolini, S. Carra, F. Di Muzio, R. Fornari, M. Masi and C. Pelosi, “A vertical reactor for deposition of gallium nitride,” Materials Chemistry and Physics 66, pp.213-218, 2000.  A. S. Segal, A. V. Kondratyev, S. Yu. Karpov, D. Martin, V. Wagner, and M. Ilegems, “Surface chemistry and transport effects in GaN hydride vapor phase epitaxy,” Journal of Crystal Growth 270, pp.384-395, 2004.  B. Monemar, H. Larsson, C. Hemmingsson, I. G. Ivanov, and D. Gogova, “Growth of thick GaN layers with hydride vapour phase epitaxy,” Journal of Crystal Growth 281, pp.17-31, 2005.  P. Kempisty, B. Lucznik, B. Pastuszka, I. Grzegory, M. Bockowski, S. Krukowski, and S. Porowski, “CFD and reaction computational analysis of the growth of GaN by HVPE method,” Journal of Crystal Growth 296, pp.31-42, 2006.  施敏, “半導體元件物理與製作技術,” 國立交通大學出版社, pp.59-63, 2003.  S. Strite and H. Morkoç, “GaN, AlN, and InN: A review,” J. Vac. Sci. Technol. 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CFDRC “CFDRC user manual,” CFD Research Corporation, Huntsville, Alabama 35805, U.S.A, 2007.  S. A. Safvi, N. R. Perkins, and M. N. Horbon, “Effect of reactor geometry and growth parameters on the uniformity and material properties of GaN/sappire grown by hydride vapor phase epitaxy,” Journal of Crystal Growth 182, pp.233-240, 1997.  E. Aujol, J. Napierala, A. Trassoudaine, E. Gillafon, and R. Cadoret, “Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen,” Journal of Crystal Growth 222, pp.538-548, 2001.||摘要:||
氫化物氣相磊晶(Hydride Vapor-Phase Epitaxy, HVPE)製程是半導體製程中重要的一環，也是近年來在半導體製程上重要的技術之一，在製程研發過程中，以數值模擬分析方法是最經濟以及有效的方式。
參考英國Bath大學王望南教授提供的VHVPE之系統示意圖形，自行設計出反應腔體，以美國CFDRC公司所發展的CFD-ACE+計算流體力學(Computation Fluod Dynamics, CFD)軟體，利用數值模擬分析方式，模擬VHVPE成長GaN，探討噴氣頭(Showerhead) 孔徑變化、噴氣頭至晶座間距離、氣體流量、晶座溫度及操作壓力對於反應腔體內流場分佈情況與GaN成長速率的影響，並分析其速度場以及濃度場之狀態。
HVPE manufacturing is an important stage in the process of the semiconductor manufacturing, and it is also the key technique of the semiconductor manufacturing in the recent years. In the manufacturing process, the numerical simulation analytical method is the most economical and effective of all.
Making a reference to the VHVPE sketch of Prof.W.N.Wang from England Bath University, a reactor is designed in this paper by oneself. The growth of HVPE into GaN is simulated by the CFD(Computation Fluod Dynamics) software of CFD-ACE+ from U.S. CFDRC corporation as well as the numerical simulation analysis mode. This paper investigated the influence of the showerhead's aperture, the distances from the showerhead to the substrate, the flow rate, the temperature of the substrate and the operating pressure on the flow field distribution as well as GaN growth in the reactor, and also analyzed the mode of velocity field and concentration field.
On the basis of the simulation result, the following conclusions could be found out:(1) When the gas flow rate increased to 3 times than original, the growth rate of GaN could be promoted greatly. Though the excessive amount of the gas flow rate could do good to the growth rate, the uniformity became worse. So more observations and researches about that should be done. (2) Temperature had a great influence on the growth rate, but when the temperature exceeded 1373 K, the growth rate of GaN didn't increase with the rise of the temperature; instead, it decreased with the same range. (3) When the operation pressure decreased to 100 torr, vortex flow had the tendency to reduce. Accordingly the concentration field and density field had a relative good uniformity and these were helpful to the growth of GaN. (4) When the distance from the showerhead to substrate was decreased to 40 mm, the growth rate was bigger and the uniformity was relatively bad. Conversely, when the distance increased, the uniformity became better. (5) The bigger the size of the showerhead was, the concentration distribution on the surface of the substrate was more uniform, which means that the growth uniformity was better.
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