Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4144
標題: 粗化結構對氮化鎵發光二極體特性影響之研究
Study of Roughened Structures on the Characteristics of GaN-Based Light Emitting Diodes
作者: 許哲銘
Hsu, Che-Ming
關鍵字: GaN;氮化鎵;roughened structures;Si treatment;textured ITO surface;粗化結構;矽處理;銦錫氧化物粗化
出版社: 精密工程學系所
引用: [1]E. Fred Schubert, “Light-Emitting Diodes”, Cambirdge University, June 9, 2003. [2]H. Amano, N. Sawaki, I. Akasaki, and Y. Toyota, “Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer”, Appl. Phys. Lett. 48, 353(1986). [3]S. Nakamura, “GaN Growth Using GaN Buffer Layer”, Appl. Phys. Lett. 30, 1705(1991). [4]S. Nakamura, “Thermal Annealing Effects on P-Type Mg-Doped GaN Films”, Appl. Phys. Lett. 31, L139- L142(1992). [5]M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, “Properties of advanced semiconductor materials: GaN, AlN, InN, BN, SiC, SiGe”, John Wiley&Sons, Inc.(2001). [6]M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1–x)0.5In0.5P /GaP light-emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett. 75, 2365(1999). [7]江家雯, “LED’s Bright Feature”, 工業技術與資訊, 174, 10(2006). [8]W. N. Carr and G. E. Pittman, “One-watt GaAs p-n Junction Infrared Source,” Appl. Phys. Lett. 3, 173(1963). [9]S. M. Pan, R. C. Tu, Y. M. Fan, R. C. Yeh, and J. T. Hsu, “Improvement of InGaN–GaN Light-Emitting Diodes With Surface- Textured Indium–Tin–Oxide Transparent Ohmic Contacts”, IEEE Photonics Technol. Lett. 15, 649(2003). [10]S. M. Sze, “Semiconductor Devices Physics and Technology”, 2nd Edition, John Wiley and Sons, Inc., 9-1~9-2, 12-1~12-4(2002). [11]史光國,“半導體發光二極體及固體照明”, 全華科技, 2-1~2-2(2005). [12]陳隆建, “發光二極體之原理與製程”, 全華科技, 7-2(2006). [13]林昭穎, 韓偉國, “高亮度LED之光學與封裝設計趨勢介紹”, 工業材料, 208, 131(2004). [14]H. Kim, J. M. Lee, C. Huh, S. W. Kim, D. J. Kim, S. J. Park, and H. Hwang, “Modeling of a GaN-based light-emitting diode for uniform current spreading” , Appl. Phys. Lett. 77, 1903(2000). [15]李長信, “背金反射鏡對氮化鎵發光二極體特性之影響研究”, 國立中興大學碩士論文(2007). [16]C. Huh, J. M. Lee, D. J. Kim, and S. J. Park, “Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by current blocking layer” , J. Appl. Phys. 92, 2248(2002). [17]J. K. Ho, C. S. Jong, C. C. Chiu, C. N. Huang, C. Y. Chen, and K. K. Shih, “Low-resistance ohmic contacts to p-type GaN” , Appl. Phys. Lett. 74, 1275(1999). [18]D. Qiao, L. S. Yu, S. S. Lau, J. Y. Lin, H. X. Jiang, and T. E. Haynes, “A study of the Au/Ni ohmic contact on p-GaN” , J. Appl. Phys. 88, 4196(2002). [19]Y. C. Lin, S. J. Chang, Y. K. Su, T. Y. Tsai, C. S. Chang, S. C. Shei, C. W. Kuo and S. C. Chen, “InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts” , Solid-State Electronics, 47, 849(2003). [20]J. F. Lin, M. C. Wu, M. J. Jou, C. M. Chang, B. J. Lee, Y. T. Tsai, “Highly reliable operation of indium tin oxide AlGaInP orange light-emitting diodes” , Electronics Lett. 30, 179(1994). [21]Y. P. Hsu, S. J. Chang, Y. K. Su, Senior Member, IEEE, S. C. Chen, J. M. Tsai, W. C. Lai, C. H. Kuo, and C. S. Chang, “InGaN–GaN MQW 發光二極體 With Si Treatment”, IEEE Photonics Technol. Lett. 17, 8, 1620(2005). [22]許晉源, “缺陷對氮化物藍光二極體光電特性之影響”, 國立交通大學博士論文(2006). [23]H. Kim, H. Yang, C. Huh, S. W. Kim, S. J. Park and H. Hwang, “Electromigration-induced failure of GaN multi-quantum well light emitting diode”, Electron. Lett. 36, 10, 908(2000).
摘要: 
本論文將研究粗化結構對於氮化鎵發光二極體(LEDs)特性之影響,以 p型氮化鎵矽處理及銦錫氧化物薄膜蝕刻粗化兩種粗化方式提升光取出效率,進而增加外部量子效率,並探討粗化對於氮化鎵發光二極體光電特性之影響。傳統發光二極體因折射率不同,容易造成光在內部全反射,導致光取出效率及發光效率降低,隨著發光二極體演進,內部量子效率提升已逐漸達到瓶頸,唯有提升光取出效率,才能再提升亮度,為了改善此因素,以粗化結構方式來降低光全反射的機會,增加發光效率。
本論文使用p型氮化鎵矽處理與銦錫氧化物薄膜蝕刻粗化兩種不同粗化方式。在光強度及光功率方面,同時具有p型氮化鎵表面矽處理及銦錫氧化物粗化之LEDs,不僅提升正向光強度,亦增加不少側向光強度及光取出角度,光強度與光功率皆為最高,優於其他粗化條件之晶粒,其中同時有兩種粗化之15×15 mil2晶粒外部量子效率可達41.6%,而經p型氮化鎵表面矽處理之15×15 mil2晶粒外部量子效率可達37.8%,電壓-電流特性方面,經p型氮化鎵表面矽處理及銦錫氧化物粗化之晶粒較未粗化晶粒略高0.15 V。經壽命測試後,粗化結構之晶粒與未粗化晶粒壽命測試結果無太大差異,且逆向漏電流有略小之趨勢,所以粗化結構的確能提升光取出效率,增加發光效率,亦可減少逆向漏電流之發生。由於兩者粗化程序並不繁瑣,成本不高,卻能提升較多光強度,故可被業界接受使用。

In this thesis, we study the influence of roughened structures on the characteristics of GaN-based light emitting diodes (LEDs), and apply the two roughened methods - Si treatment and textured ITO surface to promote the light extraction efficiency and improve the external quantum efficiency of GaN-based LEDs. For the conventional LEDs, it easily causes the total reflection of light in the internal part which leads to the decrease of the light extraction efficiency and the luminous efficiency. With the evaluation of LEDs, the internal quantum efficiency is reaching the choke point gradually. Therefore, the only way is to enhance the light extraction efficiency. In order to improve the element, we use roughened structures to diminish the chance of the total internal reflection and increase the luminous efficiency.
We use two different roughness methods of LEDs with Si treatment and textured ITO surface. The luminous intensity and the output power of LEDs with Si treatment and textured ITO surface improve not only the intensity of forward light but also more intensity of side light and the angle of the extraction of light. Besides, the luminous intensity and the output power are both the highest and better than other samples. The external quantum efficiency of 1515 mil2 LEDs with two kind roughness is 41.6%, and LEDs with Si treatment is 37.8%. About the characteristic of voltage-current, the voltage of LEDs with two kind roughness is 0.15V higher than original LEDs. The decay situation of life test of two kind roughness is also the same as original LEDs and the reverse current is lower. Hence, roughened structures of LEDs can increase the light extraction efficiency and improve the luminous efficiency indeed; meanwhile, roughened structures can decrease the reverse current. With the results that the roughened process of the two is not complicate and the cost is not high, in fact, the process can improve more intensity of light; therefore, it can be accepted by enterprises.
URI: http://hdl.handle.net/11455/4144
其他識別: U0005-2108200701170300
Appears in Collections:精密工程研究所

Show full item record
 

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.