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標題: 以磊晶膜移轉技術研製具銅基板之氮化鎵發光二極體
Investigation of GaN Light-Emitting Diodes With Cu Substrates By Epilayers Transferring Technique
作者: 曹勝凱
Tsao, Sheng-Kai
關鍵字: GaN;氮化鎵;light-emitting diode (LED);laser lift-off;precision electroplate;發光二極體;雷射剝離;精密電鍍
出版社: 精密工程學系所
引用: 參考文獻 [1]史光國“半導體發光二極體及固態照明”全華科技圖書股份有限公司, 台灣 [2] J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O''Shea, M. J. Ludowise, G. Christenson, Y.-C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Götz, N. F. Gardner, R. S. Kern, S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Applied Physics Letters, Volume 78, Issue 22, May 28, 2001, pp.3379-3381. [3] M. Koike, N. Shibata, H. Kato, Y. Takahashi “Development of high efficiency GaN-based multiquantum-welllight-emitting diodes and their applications,” IEEE 2002, vol. 8, no2, pp. 271-277. [4] C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu, J. F. Chen, “High-efficiency InGaN-GaN MQW green light-emitting diodes with CARTand DBR structures,” IEEE Journal of Selected Topics in Quantum Electronics. Vol. 8, no. 2, pp. 284-288. Mar.-Apr. 2002 . [5] C. C, Liu, Y. H. Chen, M. P. Houng, Y. H. Wang, Y. K. Su, W. B. Chen, “Improved light-output power of GaN-LEDs by selective region activation,” IEEE Photonics Technology Letters. Vol. 16, no. 6, pp. 1444-1446. June 2004 . [6] T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. Denbaars, S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,”Applied Physics Letters, Volume 84, Issue 6, pp. 855-857 (2004). [7] C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, “Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughtening of the p-GaN surface,”JApp. Phys.,vol 93, pp. 9383-9385, June. 2003. [8] C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, “ Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughtening of the p-GaN surface,”JApp. Phys.,vol 93, pp. 383-9385, June. 2003. [9] Y. K. Su, S. J. Chang, C.H. Chen, J. F. Chen, G. C. Chi, J. K. Sheu, W. C. Lai, and J. M. Tsai, IEEE Sensors J.2, 366(2002). [10] A. Plobl, G. Krauter, solid-state electronics 44, 775-782, 2000. [11] X. Lu, “material synthesis for silicon integrated-circuit applications using ion implantation,” Berkeley, 1997. [12] M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, and M. Stutzmann “Optical patterning of GaN films,” Applied Physics Letters , September 16, 1996, vol. 69, Issue 12, pp. 1749-1751. [13] J. Xu, R. Zhang, S. L. Gu, X. Q. Xiu, B. Shen, Y. Shi, Z. G. Liu, Y. D. Zheng, “Study of the laser lift-off technology of GaN films from sapphire substrates,” IEEE, vol. 22, pp.1179-1182, Oct. 2001. [14] W. S. Wong and T. Sands and N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Applied Physics Letters , 6 SEPTEMBER 1999, vol. 75, Number 10, pp . 1360-1362. [15] W. S. Wong, Y. Cho, N. J. Quitoriano, T. Sands, A. B. Wengrow and N. W. Cheung, “ Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser liftoff,” J. Electronic Mater, vol. 28, pp.1409-1413, 1999. [16] H. P. Ho, K. C. Lo, G. G. Siu, C. Surya “Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off,” IEEE, 2002., pp. 111- 115. [17] “鍍銅技術操作”, 華聯出版社。 [18] 賴耿陽 譯著“實用電鍍技術原理”, 復漢出版社。 [19] 尤光先 譯著“電鍍工程學”, 徐氏基金會。 [20] 李正中,“薄膜光學與鍍膜技術” 第五版,藝軒出版社,台北,台灣, pp.143-176,2006. [21] ITRC Newsletter, no.77, Oct. 2006. [22] K. Xu, J. Xu, P. Deng, R. Qiu, and Z. Fang, Phys, Stat. sol. (a) 176, 589. 1999. [23] H. Morkoss, “Nitride Semiconductor Device,” Springer, p44, 1999. [24] T. Mukai, M. Yamade, and S. Nakamura, “Current and temperature dependence of electroluminescence of InGaN-based UV/blue/green diodes,”Jpn. J. Appl. Phys., vol. 37, pp.L1358-1361, Nov. 1998.
本論文主要是利用基板轉移技術研製氮化鎵發光二極體,並探討其元件的特性。我們使用雷射剝離技術來剝離氮化鎵元件的藍寶石基板,並搭配精密電鍍技術,將剝離的氮化鎵薄膜轉移到金屬銅基板上,製作p型在上的氮化鎵/鏡面/銅基板結構發光二極體。在此將傳統氮化鎵/藍寶石、氮化鎵/藍寶石/金屬鋁結構、氮化鎵/鋁鏡面/銅結構與氮化鎵/銀鏡面/銅結構作一比較,在350 mA電流下,則分別為4.53 V、4.55 V、4.11 V以及4.12 V,顯示出元件的操作電壓在氮化鎵/鋁鏡面/銅結構與氮化鎵/銀鏡面/銅結構下明顯變小。另外,350 mA下氮化鎵/藍寶石、氮化鎵/藍寶石/金屬鋁、氮化鎵/鋁鏡面/銅基板結構以及氮化鎵/銀鏡面/銅基板結構發光強度分別為1555.9 mcd、2238.6 mcd、2379.5 mcd以及2592.3 mcd,氮化鎵/藍寶石/鋁鏡面、氮化鎵/鋁鏡面/銅基板結構以及氮化鎵/銀鏡面/銅基板結構發光強度分別比傳統的氮化鎵/藍寶石高出1.44、1.53以及1.67倍,而氮化鎵/藍寶石以及氮化鎵/藍寶石/金屬鋁的結構發光強度會先到達飽和狀態,但是氮化鎵/鋁鏡面/銅基板結構以及氮化鎵/銀鏡面/銅基板結構隨著電流增加,其發光強度也隨著線性增加,由此可知氮化鎵/鋁鏡面/銅基板結構以及氮化鎵/銀鏡面/銅基板結構在大電流下的穩定性相當好,在置換成銅基板結構後的氮化鎵發光二極體,因銅基板有良好的散熱特性,因此會有較佳的熱效應容忍特性。

A GaN/mirror/Cu LED fabricated using the laser lift-off and electroplating is demonstrated. The UV laser was first employed to separate the p-side-up device from the sapphire substrate and then the device was electroplated by a thick copper film. The forward voltage (@350 mA) of the original GaN/sapphire, GaN/sapphire/Al, GaN/Al/Cu and GaN/Ag/Cu LED sample were 4.53 V, 4.55 V, 4.11 V and 4.12 V, respectively. The result indicated that the forward voltages of GaN/Al/Cu and GaN/Ag/Cu LEDs are lower than the other two LED structures with sapphire substrate. The corresponding luminance intensity of the p-side-up GaN/sapphire, GaN/sapphire/Al, GaN/Al/Cu and GaN/Ag/Cu are 1555.9 mcd, 2238.6 mcd, 2379.5 mcd and 2592.3 mcd (@350 mA). The luminance intensity of the p-side-up GaN/sapphire/Al, GaN/Al/Cu and GaN/Ag/Cu LED increases 1.44 times, 1.53 times and 1.67 times as compared with that of the original GaN/sapphire LED(@350 mA). The luminance intensity of the GaN/sapphire and GaN/sapphire/Al presents the early saturation, but that of the GaN/Al/Cu and GaN/Ag/Cu structure linearly increases with electric current. The stability of GaN/Al/Cu and GaN/Ag/Cu structure is quite well under high current. It is due to GaN light-emitting diodes with the copper substrate provide a good heat sink and thermal management.
其他識別: U0005-2708200709165700
Appears in Collections:精密工程研究所

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