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|標題:||Mitigative Tin Whisker Growth Under Mechanically Applied Tensile Stress||作者:||Chen, Y.J.
|關鍵字:||Sn whisker;tensile stress;microstructure;hillock formation;sn;films;electrodeposits;cu||Project:||Journal of Electronic Materials||期刊/報告no：:||Journal of Electronic Materials, Volume 38, Issue 3, Page(s) 415-419.||摘要:||
Sn whisker/hillock growth is a result of the release of compressive stress in a Sn thin film. Filamentary Sn whiskers were formed on an electrodeposited Sn thin film aged at room temperature, while Sn hillocks were formed as the aging temperature was raised to 80A degrees C and 150A degrees C. By mechanically applying a tensile stress on the Sn thin film, the growth of the Sn whisker/hillock was significantly mitigated. This mitigation growth suggests that part of the compressive stress in the Sn thin film was neutralized by the mechanically applied tensile stress.
|Appears in Collections:||化學工程學系所|
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