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|標題:||Atomic migration in eutectic SnBi solder alloys due to current stressing||作者:||Chen, C.M.
|關鍵字:||electromigration failure;bi;interconnect;segregation;joints;copper||Project:||Journal of Materials Research||期刊/報告no：:||Journal of Materials Research, Volume 23, Issue 4, Page(s) 1051-1056.||摘要:||
Current stressing at densities from 2.9 to 7.3 x 10(4) A/cm(2) has significant effects on the atomic migration of eutectic SnBi solder alloys. At lower density (2.9 x 10(4) A/cm(2)), electromigration dominates the migration of both Sn and Bi, and drives Sn and Bi atoms to migrate toward the anode side. While at higher densities (4.4 and 7.3 x 10(4) A/cm(2)), the enhanced Bi electromigration induces a back stress, which promotes a reversed migration of Sn toward the cathode side. A large number of Sn atoms accumulate at the cathode side and form lumps there.
|Appears in Collections:||化學工程學系所|
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