Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/41579
標題: Atomic migration in eutectic SnBi solder alloys due to current stressing
作者: Chen, C.M.
陳志銘
Huang, C.C.
關鍵字: electromigration failure;bi;interconnect;segregation;joints;copper
Project: Journal of Materials Research
期刊/報告no:: Journal of Materials Research, Volume 23, Issue 4, Page(s) 1051-1056.
摘要: 
Current stressing at densities from 2.9 to 7.3 x 10(4) A/cm(2) has significant effects on the atomic migration of eutectic SnBi solder alloys. At lower density (2.9 x 10(4) A/cm(2)), electromigration dominates the migration of both Sn and Bi, and drives Sn and Bi atoms to migrate toward the anode side. While at higher densities (4.4 and 7.3 x 10(4) A/cm(2)), the enhanced Bi electromigration induces a back stress, which promotes a reversed migration of Sn toward the cathode side. A large number of Sn atoms accumulate at the cathode side and form lumps there.
URI: http://hdl.handle.net/11455/41579
ISSN: 0884-2914
DOI: 10.1557/jmr.2008.0128
Appears in Collections:化學工程學系所

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