Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4159
標題: 灰階光罩之製作與TFT製程關係探討
Fabrication methods of gray tone mask for TFT process
作者: 曹偉銘
Tsao, Wei-Ming
關鍵字: gray tone mask;灰階光罩;thin film transistor;薄膜電晶體
出版社: 精密工程學系所
引用: [1]盧慶儒,”技術洞察-面對多樣化市場需求,TFT液晶的製造技術不斷革新 ”,技術IT月刊,2006.05。 [2]"高度精細化和大型化TFT-LCD光罩的最新趨勢"中華液晶網,2007。 [3]"LCD 製程技術發展現況與趨勢",工研院經資中心ITIS計畫,2001。 [4]Seungjin Choi, Jinhui Cho, Kyu-yong Han, J. H. Jang, J. G. Park, H. J. Yoon, B. N. Yoon , S. H. Ihm, and Young Jin Lim, Novel Four-Mask Process in the FFS TFT-LCD with Optimum Multiple-Slit Design Applied by the use of a Gray-Tone Mask, SID 2005。 [5]秦志賢,”灰階光罩於非球面折射式微透鏡之製作研究”,國立中興大學碩士論文,2001。 [6]吳奇隆,”先進微影材料之光學特性研究”,國立清華大學碩士論文,2004。 [7] Michael R.Wang and Heng Su, ”Laser direct-write gray-level mask and one-step etching for diffractive microlens fabrication”, Appl.Opt., Vol.37, No.32 (1998). [8]V. Korolkov, A. Malyshev, A. Poleshchuk, V. Cherkashin, H. J. Tiziani, C. Pruss, T. Schoder, J. Westhauser, and C. Wu, “Fabrication of gray-scale masks and diffractive optical elements with LDW-glass,” Optical Engineering, vol.4440, pp. 73-84, 2001。 [9]簡葉恩,”設計與製作半色調光罩以製作具任意外形之微結構在微元件光學上的應用”國立交通大學碩士論文,2000。 [10]松本正一,角田市良,“液晶之基礎與應用”,國立編譯館,1996。 [11]陳蓮春,”LCD 彩色液晶顯示器原理與技術”,建興出版社,1999。 [12]許訓誠,”彩色濾光片產業專題研究”,2005。 [13]Pochi Yeh, and Claire GU, Optics of Liquid Crystal Displays, John Wiley & Sons, Inc., 1999。 [14]柯長泰,”薄膜電晶體液晶面板生產之製令規劃“,國立雲林科技大學碩士論文,2005。 [15]呂建鋒,”MgO/Cr2O3多層膜於衰減相移式光罩之研究“,大同大學碩士論文,2002。 [16]薛英家,”尖端平面顯示器”,中興大學精密所上課教材,2006。 [17]吳玉祥,”TFT-LCD顯示原理製程技術與設備”, 光機電奈米量測系統科技整合研討會,2006。 [18]李俊昇,”液晶面板組裝廠批量製程派工法則之設計”,國立交通大學工業工程與管理學系碩士論文,2003。 [19]汪芳興,劉漢文,”非晶矽TFT-LCD製造與畫素設計”,電子月刊,2002.08。 [20]Jean H. Song, D. J. Kwon, S. G. Kim, N. S. Roh, H. S. Park, Y. B. Park, D. G. Kim, C. O. Jeong, H. S. Kong, C. W. Kim, and K. H. Chung, Advanced Four-Mask Process Architecture for the a-Si TFT Array Manufacturing Method, SID 2002,34.1。 [21]P. F. Chen, J. H. Chen, D. I. Chen, H. J. Sung, J. W. Hwang, and I. M. Lu, Four Photolithography Process Amorphous-Silicon Thin-Film Transistor Array, SID 2000, 42.2。 [22] C. W. Kim, Y. B. Park, H. S. Kong, D. G. Kim, S. J. Kang, J. W. Jang, and S. S. Kim, A Novel Four-Mask-Count Process Architecture for TFT-LCDs, SID 2000, 42.1。
摘要: 
本論文主要討論應用灰階光罩(Gray Tone Mask),光罩表面的鉻膜厚度不同,會造成光罩的穿透率(Transmittance, T)不同,以至於產生不同的照射量,會使光阻(Photoresist, PR)的表面受到不同的曝光照射量,在經過顯影(Develop)後,會產生不同厚度的光阻層次 (Photoresist Remain, PR remain) 。以此蝕刻鉻的方法來製作灰階光罩,主要目的是為解決狹縫光罩不穩定的的缺點,解決四道光罩TFT製程,因光罩不穩定的的缺點的良率損失。
若將此特性應用在薄膜電晶體液晶顯示器 (Thin Film Transistor–Liquid Crystal Display, TFT-LCD)的TFT元件的半導體層(Semiconductor electrode, SE)和源極、汲極的電極層(Source Drain Electrode,SD)的曝光製程,曝光顯影後光阻的厚度不同,再將較薄的光阻殘留灰化(Ashing)後,便可將兩道光罩合成一道。在本文中將探討不同膜厚之光罩,穿透率和曝光顯影後光阻的殘留狀況。結果發現光罩膜厚和穿透率雖不成正比關係,但光罩穿透率與光阻殘留狀況則有一定的關係;而曝光時間和顯影時間不同也都會照成光阻的殘留狀況不同。

When thicknesses are different on chromium mask, it will result in different transmittance. As the exposure energy varies onto photo resist, it is found different photoresist remained thicknesses and profiles after development. This technique has been applied to the photo process of semiconductor (SE) layer, source/drain (SD) electrode for TFT device fabrication. It is called 4-mask TFT process.
After exposure and develop processes by using gray tone mask, the photoresist thicknesses are different in semiconductor and source/drain region. By adopt a plasma ashing step after semiconductor island etching, the thinner portion of source/drain region is removed. Thus, the two processes, SE and SD photo steps, can be combined into one single mask. It can improve the yield caused by the non-uniform photo problem in present 4-mask TFT process.
The applications of gray tone masks have been studied in this thesis. Thickness of the mask will been confered with transmittance and photoresist remained after photolithography in this study. It is been found that the thicknesses of mask and transmittance are not in direct proportion, but there are relationships between the transmittance of the mask and the photoresist remained.
URI: http://hdl.handle.net/11455/4159
其他識別: U0005-2708200723533100
Appears in Collections:精密工程研究所

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