Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/41593
標題: Growth orientation of the tin whiskers on an electrodeposited Sn thin film under three-point bending
作者: Chen, C.M.
陳志銘
Chen, Y.J.
關鍵字: Thin films;Three-point bending;Tin whisker;Microstructure;hillock;cu
Project: Materials Letters
期刊/報告no:: Materials Letters, Volume 63, Issue 17, Page(s) 1517-1520.
摘要: 
To release the compressive stress in an as-electrodeposited tin (Sri) layer, filamentary Sn whiskers were formed on the layer aged at room temperature. A three-point bending test was performed on an electrodeposited Sn layer to investigate the Sn whisker growth under mechanically applied tensile stress. Sri whisker growth was mitigated on the Sn layer subjected to a tensile stress in bending. The growth orientation of the Sri whiskers formed on the high tensile stress region was random but directional on the low tensile stress region. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/41593
ISSN: 0167-577X
DOI: 10.1016/j.matlet.2009.04.006
Appears in Collections:化學工程學系所

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