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|標題:||Effect of embedding a porous medium on the deposition rate in a vertical rotating MOCVD reactor based on CFD modeling||作者:||Lin, C.H.
|關鍵字:||Metalorganic chemical vapor deposition;Computational fluid dynamics;Porous medium;chemical-vapor-deposition;transport phenomena;cvd reactor;flow;uniformity;optimization;chemistry;growth;design;omvpe||Project:||International Communications in Heat and Mass Transfer||期刊/報告no：:||International Communications in Heat and Mass Transfer, Volume 36, Issue 7, Page(s) 680-685.||摘要:||
This paper investigates numerically the effect of embedding a porous medium on the deposition rate in a two-dimensional (2-D) axi-symmetric vertical rotating metalorganic chemical vapor deposition (MOCVD) reactor. The 2-D Navier-Stokes, thermal-energy, and mass transfer equations as well as the wall surface reaction for growth rate in this model are solved by using commercial computational fluid dynamics (CFD) package, FLUENT (version 6.2), with a segregated method. As shown in the results, the recirculation cell caused by a buoyancy effect above the susceptor may be eliminated due to a large pressure drop during CVD process. Under a condition of the appropriate porosity and the appropriate distance between a porous medium and the susceptor, the film uniformity may be increased about 53.3% owing to a thin boundary layer near the susceptor. In addition, the case of a porous medium embedded in a modified MOCVD reactor is considered in this study to increase the film uniformity further. The numerical results show that the uniformity of the film may be enhanced about 77.9%. (C) 2009 Elsevier Ltd. All rights reserved.
|Appears in Collections:||化學工程學系所|
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