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標題: 以雷射直寫技術製作三維微影圖形之研究
Investigation of three-dimension lithography using a laser direct writing technique
作者: 白能宗
Pai, Neng-Tsung
關鍵字: Gray level laser-direct writing;雷射灰階直寫;Micro lens;Three-dimension lithography.;微光學鏡頭;三維微影圖形
出版社: 精密工程學系所
引用: [1] W. B. Veldkamp, “Overview of Microoptics:Past, Present, and Future”, Proc. SPIE 1544, pp. 287-299(1991). [2] M. R. Wang and H. Su, “Laser direct-write grey-level mask and one-step etching for diffractive microlens fabrication”, Appl. Opt. 37, pp. 7568-7576(1998). [3] Z. D. Propovic, Appl. Opt. 27, p. 1281(1988). [4] H. P. Herzig, ”Micro-Optics Elemens, system and applications” (1977). [5] 王述宜,王國禎,秦志賢, ”灰階非球面折射式微透鏡陣列之UV-LIGA製程技術”, 微系統科技協會會刊, 第六期, pp. 55-66(2001). [6] S. Sinzinger, J. Jahns, “Microoptics”, Weinheim, New York(1999). [7] N. S. Ong, Y. H. Koh, Y. Q. Fu, “Microlens array produced using hot embossing process”, Microelectronic Engineering, pp. 365 -379(2002). [8] S. Chen, X. Yi and H. Ma, “Anovel method of fabrication of microlens arrays”, Infrared physics & technology, pp. 133-135(2003). [9] W. Däschner, M. Larsson and S. H. Lee, “Fabrication of monolithic diffractive optics elements by the use of e-beam direct write on an analong resist and a single chemically assisted ion-beam-etching step”, Appl. Opt. 34, pp. 2534-2539(1995). [10] M. R. Wang and H. Su, “Laser direct-write gray-level mask and one-step etching for diffractive microlens fabrication”, Appl. Opt. 37, pp. 7568-7576(1998). [11] P. Sixt, J. M. Mayer, P. Regnault and G. Vorin, “One-step 3S shaping using a gray-tone mask for optical and microelectronic applications”, Microelectron. Eng.23, p. 449(1994). [12] W. Däschner, P. Log, M. Larsson and S. H. Lee, “Fabrication of diffractive optical elements using a single optical exposure with a gray level mask”, J. Vac. Sci. Technol. B13, p. 2729(1995). [13] T. J. Suleski and D. C. O’shea, “Gray scale mask for diffractive- optics fabrication : I. Commercial slide imagers”, Appl. Pot.34, p. 627 (1995). [14] 劉博文, “光電元件導論”, 權威圖書有限公司, 第五章, pp.1-28 (2006). [15] 余合興, “光電子學---原理及應用”, 中央圖書出版社 pp. 213-224(1993). [16] A. VanderLugt, “Optical Signal Processing” , pp. 288-334(1992). [17] 江月松,宋馭民,劉正瑜,全中興,陳積德, “光電技術”, 新文京開發出版股份有限公司 pp. 331-342(2005). [18] 江月松,宋馭民,劉正瑜,全中興,陳積德, “光電技術實驗”, 新文京開發出版股份有限公司 pp.97-104(2005). [19] 龍文安, “半導體奈米技術”, 五南圖書出版股份有限公司, pp. 599-680(2006). [20] 羅吉宗, “薄膜科技與應用”, 全華科技圖書股份有限公司, 第八章, pp. 28-31(2005). [21] 龍文安, “半導體奈米技術”, 五南圖書出版股份有限公司, pp. 326-331(2006). [22] 施敏, “半導體元件物理與製作技術”, 國立交通大學出版社, pp. 619-622(2002). [23] 邱華威, “雷射直寫光罩系統與光罩製作簡介”, 光映科技簡報.
本論文利用雷射書寫系統利用灰階直寫之方式直寫於光阻上,製作三維微影圖形;先以Auto CAD繪製出所需圖案,經由DWL66之轉檔程式將之轉成機械碼後,不需使用光罩,利用DWL 66半導體雷射灰階直寫之方式進行圖形之製作。於製程中,探討各灰階對光阻、顯影時間對灰階直寫後之光阻圖形與光強度之影響,經由灰階對光阻曝光顯影之二維之量測後,利用灰階高度設計出兩種圖形之組合,製作三維微半球狀之圖形,之後並嘗試製做出其他不同形狀之三維圖形。
於製程中我們知道,不需光罩即可完成黃光微影製程製作出所需之二維或三維圖形。在圖形設計上我們使用圓與環之組合,利用4mm之光學鏡頭配合使用光透過率10%的光衰減鏡,光阻使用AZ 5214E旋轉塗佈第一階段轉速1000rpm塗佈時間10秒與第二階段轉速2000rpm塗佈時間25秒後,光阻厚度約2μm,經由8分鐘90℃的軟烤,雷射直寫後最佳顯影時間30秒,再由30分鐘120℃的硬烤後成功製做出三維之圖形。

For a conventional photolithography technique, two-dimensional or three-dimensional patterns always need single or multiple masks to make repetitive exposure processes. Once the masks are contaminated by residual photoresist (PR) or particle defects, the photolithography performance will be easily degraded.
In this thesis, the gray-level laser-direct write system was used to make three-dimensional micro components, where the lithography process was designed using an AutoCAD software. Then the pattern software was transformed by the machine code using the DWL66 transform program. During the experiments, the gray level can be controlled by the filtered laser power, photosensitive and development time. After the development and hard bake process, the two dimensional photoresist pattern can be measured using scanning electron microscopy and surface profilometry. The measure results demonstrate that similar microlens and other shapes can be fabricated by controlling the gray level and pattern design.
In our direct-write process, the circular and ring patterns were designed to make three-dimension lithography with the 4 mm lens and 10% filter. The PR thickness (AZ 5214E) can be controlled to 2μm under a two-step spin process (1000rpm@10 sec and 2000rpm@25sec). The pre-bake condition was 90℃ for 8min and the best development time was 30 sec. After the exposure process, a post-bake condition of 120℃, 30min was used. Finally, we have successfully performed the two- and three-dimensional lithography without using any conventional photomask.
其他識別: U0005-1508200817515000
Appears in Collections:精密工程研究所

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