Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/42007
標題: Through-Hole Filling by Copper Electroplating
作者: Dow, W.P.
竇維平
Chen, H.H.
Yen, M.Y.
Chen, W.H.
Hsu, K.H.
Chuang, P.Y.
Ishizuka, H.
Sakagawa, N.
Kimizuka, R.
關鍵字: plating formula;microvia;performance;additives;electrodeposition;convection;vias
Project: Journal of the Electrochemical Society
期刊/報告no:: Journal of the Electrochemical Society, Volume 155, Issue 12, Page(s) D750-D757.
摘要: 
Through holes (THs) with different shapes were formed by laser drilling on a printed circuit board to evaluate the filling capability of two copper plating formulas. The shapes of these THs were cylindrical, V- and X-shaped. Two copper plating formulas, accelerator-free formula (AFF) and accelerator-containing formula (ACF), were employed in this work. The AFF contained only one organic additive and the ACF was composed of multiorganic additives. The electrochemical characteristics of the AFF were investigated by cyclic voltammetry, which could be utilized to explain the results of filling plating. The plating results showed that the cylindrical TH could be fully filled using AFF. However, the V- and X-shaped THs could be fully filled using ACF. TH and microvias could be simultaneously filled in one plating bath using the AFF. A filling mechanism based on an adsorption/consumption/diffusion mode was proposed to explain these plating results. (C) 2008 The Electrochemical Society. [DOI: 10.1149/1.2988134] All rights reserved.
URI: http://hdl.handle.net/11455/42007
ISSN: 0013-4651
DOI: 10.1149/1.2988134
Appears in Collections:化學工程學系所

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