Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/42053
標題: Thermal Management and Interfacial Properties in High-Power GaN-Based Light-Emitting Diodes Employing Diamond-Added Sn-3 wt.%Ag-0.5 wt.%Cu Solder as a Die-Attach Material
作者: Chen, C.J.
洪瑞華
Chen, C.M.
Horng, R.H.
Wuu, D.S.
Hong, J.S.
武東星
陳志銘
關鍵字: Thermal resistance;diamond;die-attach materials;interfacial reaction;light-emitting diodes
Project: Journal of Electronic Materials
期刊/報告no:: Journal of Electronic Materials, Volume 39, Issue 12, Page(s) 2618-2626.
摘要: 
The thermal management of high-power GaN-based light-emitting diodes (LEDs) soldered with Sn-3 wt.%Ag-0.5 wt.%Cu (SAC305) solder and diamond-added SAC305 solder was evaluated. Diamond addition was found to significantly reduce the surface temperature and total thermal resistance of the LEDs, revealing that diamond-added SAC305 solder is a promising die-attach material for high-power LED packaging. Interfacial reactions in the LED solder joints were also investigated. The thin Au wetting layer in the chip's backside metallization was rapidly consumed in the initial stage of reflow, forming an AuSn(4) phase at the interface. Subsequently, the AuSn(4) phase detached from the interface, leading to dewetting of the SAC305 solder from the LED chip. To avoid dewetting, a new backside metallization of LED chips should be developed for SAC305 solder.
URI: http://hdl.handle.net/11455/42053
ISSN: 0361-5235
DOI: 10.1007/s11664-010-1354-6
Appears in Collections:化學工程學系所

Show full item record
 

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.