Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/4212
標題: 圖案化氮化鎵發光元件之外部量子效率分析
Analyzed the external quantum efficiency of patterned GaN-based light-emitting diodes
作者: 葉展宏
Ye, Jhan-Hong
關鍵字: GaN;氮化鎵;quantum efficiency;量子效率
出版社: 精密工程學系所
引用: [1] Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert,,a_ D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, Appl. Phys., “Lett.Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities”Vol94,pp.111109(2009) [2] A. Hori, D. Yasunaga, A. Satake, and K. Fujiwara, Appl. Phys. Lett., Temperature dependence of electroluminescence intensity of green and blue InGaN single-quantum-well light-emitting diodes Vol. 79, No. 22,(2001) [3] A. Hori, D. Yasunaga, A. Satake, and K. Fujiwara, J. Appl. Phys., Temperature and injection current dependence of electroluminescence intensity in green and blue InGaN single-quantum-well light-emitting diodes ,Vol. 93, No. 6,(2003) [4] N. Otsuji and K. Fujiwara, J. Appl. Phys., Electroluminescence efficiency of blue InGaN/GaN quantum-well diodes with and without an n-InGaN electron reservoir layer, Vol. 100, 113105,(2003) [5] Y. Yamane and K. Fujiwara, Appl. Phys. Lett., Largely variable electroluminescence efficiency with current and temperature in a blue „InGaN multiple-quantum-well diode, Vol.91, 073501 [6] Di Zhu, Jiuru Xu, Ahmed N. Noemaun, Jong Kyu Kim, E. Fred Schubert, Mary H. Crawford,and Daniel D. Koleske Appl. Phys. Lett., The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes, Vol.94, 081113 (2009) [7]M. Ferhat, and F. Bechstedt, , “First-principles of gap bowing in InxGa1-xN and InxAl1-xN alloys: Relation to structural and thermodynamic properties,” Phys. Rev. B Vol.65, pp. 075213(2002) [8]Kittel, Introduction to Solid State Physical [9]L. Macht, P.R. Hagenan, S. Haffouz, and P. K. Larsen, , “Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si(111) substrates,” Appl. Phys. Lett. Vol.87,pp. 131904(2005) [10]Su-Huai Wei, NCPV and Dolar Program Review Meeting, pp. 713(2003) [11]T.Takeuchi,C.Kisielowski,V.Iota,B.A.Weinstein,L.Mattos,N.A.Shapiro,J.Kruger,E.R.Weber,and J. Yang, ,“ Near-field scanning optical microscopy studies of V-grooved quantum wire lasers,” Appl. Phys. Lett.Vol.73,pp.1691(1998) [12] H. Gotoh, T. Tawara, Y. Kobayashi, N. Kobayashi, N. Kobayashi, and T. Saitoh, , “InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy,” Appl. Phys. Lett.Vol.83,pp.4791(2003) [13] P. Perlin, C. Kisielowski, V. Iota, B. A. Weinstein, L. Mattos, N. A. Shapiro, J. Kruger, E. R. Weber, and J. Yang, , “ InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy,” Apple. Phys. Lett.Vol.73,pp.2778 (1998) [14]Lun Daia, and Bei Zhang, , “Comparison of optical transitions in InGaN quantum well structures and microdisks,” J. Appl. Phys. Vol.89, pp. 4951(2001) [15] Fabio Bernardini, and Vincenzo Fiorentini,“Macroscopic polarization and band offsets at nitride heterojunctions,” Phys. Rev. B, Vol. 57, pp. R9427 (1998) [16]Hadis Morkoc, Nitride Semiconductors and Devices [17]M.R.Krames,M.Ochai-Holfler,C.Carter-Coman,E.I.Chen,I.-H.Tan,P.Grillot,N.F.Gradner,H.c.Chui,J.-W.Huang,S.A.Stockman,F.A.Kish,M.G.Craford T.S.Tan,C.P.Kocot,andM.Hueschen J.Posselt,B.Loh,G.Sasser,D.Collins, Appl.Phys.Lett.75 2365(1999)
摘要: 
在氮化銦鎵發光二極體之內部量子效率量測上,本論文採用傳統變溫光激螢光光譜量測,並架構了變電壓與低電流注入之變溫光激螢光光譜量測,模擬實際發光二極體操作條件,與變溫電激發光光譜分析,分析發光元件真實內部量子效率。在外加偏壓環境的操作下,正電流(順向電壓)時,光強度會因為室溫注入電流,使得成長幅度大於低溫,使得室溫光強度成長幅度較大。負電流(反向偏壓)時,室溫會有較嚴重的穿隧效應現象,強度快速衰減,故以開路電壓(Voc、電流為零)操作下定義內部量子效率,其量測數值高於變溫光激螢光光譜量測。變溫EL量測下,IQE隨電流增加,成長趨勢逐漸趨緩,以標準操作電流20mA下,定義室溫與變塭峰值電激發光強度比值為電激發光內部量子效率,並探討不同結構下與內部量子效率之關連性。

In this thesis, the internal quantum efficiency of the InGaN-based light emitting diodes were analyzed through dependent micro-photoluminescence (μ-PL) spectrum, bias-dependent μ-PL spectrum, and lower-current injection μ-PL spectrum by varying the temperature from 10K to 300K. The IQE measurements under the lower injection current and the applying bias voltages conditions were reasonable for the actual operating LEDs. During the bias-dependent μ-PL measurement, the injection current induced EL emission at forward voltage, and the tunneling current induced leakage current at reverse voltage are affected the μ-PL measurement and the calculated IQE values. The LED operated at the open circuit condition (Voc, zero current condition) had the reasonable IQE values compared to the conventional temperature-dependent μ-PL measurement. For the EL IQE measurement, the ratio of between the EL intensity at RT to peak EL intensity by varying the temperature was defined as the EL IQE value. The IQE values in different LED structures were analyzed through the temperature-dependent PL and EL measurements.
URI: http://hdl.handle.net/11455/4212
其他識別: U0005-1208200912301100
Appears in Collections:精密工程研究所

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