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Analyzed the electrical and optical properties of the InGaN light-emitting diodes
|關鍵字:||氮化鎵;InGaN;發光二極體;LED||出版社:||精密工程學系所||引用:||G. Fasol, “Room-Temperature Blue Gallium Nitride Laser Diode,” Science, Vol.272, pp. 1751(1996) F. A. Ponce and D. P. Bour, “Nitride-based semiconductors for blue and green light-emitting devices,” Nature, Vol.386,pp.351-359(1997)  A. Hori, D. Yasunaga, A. Satake, and K. Fujiwara,“Temperature dependence of electroluminescence intensity of green and blue InGaN single-quantum-well light-emitting diodes” Appl. Phys. Lett.Vol. 79, No. 22,(2001)  A. Hori, D. Yasunaga, A. Satake, and K. Fujiwara, “Temperature and injection current dependence of electroluminescence intensity in green and blue InGaN single-quantum-well light-emitting diodes”, J. Appl. Phys.Vol. 93, No. 6,(2003)  N. Otsuji and K. Fujiwara, , “Electroluminescence efficiency of blue InGaN/GaN quantum-well diodes with and without an n-InGaN electron reservoir layer”, J. Appl. Phys.Vol. 100, 113105,(2003)  Y. Yamane and K. Fujiwara,, “Largely variable electroluminescence efficiency with current and temperature in a blue InGaN multiple-quantum-well diode”, Appl. Phys. Lett.Vol.91, 073501 M. Ferhat, and F. Bechstedt, , “First-principles of gap bowing in InxGa1-xN and InxAl1-xN alloys: Relation to structural and thermodynamic properties,” Phys. Rev. B Vol.65, pp. 075213(2002) Kittel, Introduction to Solid State Physical L. Macht, P.R. Hagenan, S. Haffouz, and P. K. Larsen, , “Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si(111) substrates,” Appl. Phys. Lett. Vol.87,pp. 131904(2005) Su-Huai Wei, NCPV and Dolar Program Review Meeting, pp. 713(2003) T.Takeuchi,C.Kisielowski,V.Iota,B.A.Weinstein,L.Mattos,N.A.Shapiro,J.Kruger,E.R.Weber,and J. Yang, ,“ Near-field scanning optical microscopy studies of V-grooved quantum wire lasers,” Appl. Phys. Lett.Vol.73,pp.1691(1998)  H. Gotoh, T. Tawara, Y. Kobayashi, N. Kobayashi, N. Kobayashi, and T. Saitoh, , “InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy,” Appl. Phys. Lett.Vol.83,pp.4791(2003)  P. Perlin, C. Kisielowski, V. Iota, B. A. Weinstein, L. Mattos, N. A. Shapiro, J. Kruger, E. R. Weber, and J. Yang, , “ InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy,” Apple. Phys. Lett.Vol.73,pp.2778 (1998) Lun Daia, and Bei Zhang, , “Comparison of optical transitions in InGaN quantum well structures and microdisks,” J. Appl. Phys. Vol.89, pp. 4951(2001)  Fabio Bernardini, and Vincenzo Fiorentini,“Macroscopic polarization and band offsets at nitride heterojunctions,” Phys. Rev. B, Vol. 57, pp. R9427 (1998) Hadis Morkoc, Nitride Semiconductors and Devices Hisashi Masui, Junichi Sonoda, Nathan Pfaff, Ingrid Koslow, Shuji Nakamura and Steven P DenBaars “Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes”J. Phys. D: Appl. Phys. 41(2008)165105 Di Zhu, Jiuru Xu, Ahmed N. Noemaun, Jong Kyu Kim, E. Fred Schubert, Mary H. Crawford, and Daniel D. Koleske “The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes”Apple. Phys. Lett.94, 081113 (2009) Y. Yamane and K. Fujiwara,“Largely variable electroluminescence efficiency with current and temperature in a blue (In, Ga)N multiple-quantum-well diode”Apple. Phys. Lett.91, 073501(2007) A. Hori, D. Yasunaga, A. Satake, and K. Fujiwara,“Temperature and injection current dependence of electroluminescence intensity in green and blue InGaN single-quantum-well light-emitting diodes” J. Appl. Phys. Volume 93, number 6||摘要:||
In this thesis, the electrical and optical properties of the InGaN light-emitting diodes were analyzed by the temperature-dependent electroluminescence and photoluminescence systems. During the PL measurement excited by 405nm diode laser, the decreasing PL intensities of the biased LED sample were observed by increasing the measurement temperature that was caused by the thermal and tunneling effect to have the lower internal quantum efficiency (IQE). According to the temperature-dependent EL spectrum under injection current between -1mA to 1mA, the IQE value at Voc (open-circuit voltage) is 44.6% that was close to the temperature-dependent PL IQE value of 41.8%. The changes of the electrical and optical properties were characterized by injected small (0.01mA~1mA) and larger current (20mA~40mA) in the temperature-dependent EL measurement, the strongest EL intensity was observed at 100K. The IQE of EL spectrum intensity and efficiency are 61.6% and 64.8%, respectively. The conclusions are described as following. First, the IQE of PL with bias would be lower than the actual value caused by the tunneling effect at room temperature. Second, the IQE of PL spectrum at zero current condition (open-circuit voltage) is closer to the normal PL value. Third, IQE of bias-dependent PL does not correspond to the actual value because of the current at room temperature is higher than at 30K. Finally, the IQE of EL measurement is higher than PL measurement that the IQE of EL measurement is similar to the actual IQE of InGaN LEDs.
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