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標題: 以四點彎矩方法探討外加應力與銅-錫介金屬層生成關係
Stress Effect Study on Copper-Tin Intermetallic Formation by Four Point Bending Method
作者: 楊卓朕
Yang, Chuo Cheng
關鍵字: four point bending method;四點彎矩測試法;intermetallic compound;介金屬化合物
出版社: 精密工程學系所
引用: 1.陳信文 , 陳立軒 , 林永森 , 陳志銘 , ”電子構裝技術與材料” , 高立圖書有限公司(2005)。 2.陳育仁, “外加應力對錫鬚生長及銲點界面反應之影響”,碩士論文,國立中興大學化工所(2008)。 3.King-Ning Tu , “Solder joint technology” , Springer(2007). 4.Daniel Lu , C.P.Wong , “Material for Advanced Package” , Springer US(2009). 5.Stanislaw Mrowec, “Defects and Diffusion in solids”, Elsevier Science Ltd (1974). 6.M. Hattori, “Needs and applications of high temperature LSIs for automotive electronic systems”, Proc. HITEN High Temperature Electronics Conf, pp. 37-43(1999). 7.D. R. Frear, “Issue related to the implementation of Pb-free electronic solders in consumer electronics”, J Mater Sci: Mater Electron, Vol.18, No.1-3, pp.319-330(2007). 8.S. L. Ngoh, W. Zhou, J. H. L. Pang, “Effect of Stress State on Growth of Interfacial Intermatellic Compounds Between Sn-Ag-Cu Solder And Cu Substrate Coated with Electroless Ni Immersion Au”, J. Electron. Mater, Vol.37, No.12, pp.1843-1850(2008). 9.Mulugeta. Abtew, Guna. Selvaduray, “Lead-free solder in Microelectronics”, Materials Science and Engineering, Vol.27, pp.95-141(2000). 10.Ya.E.Geguzin, “Ascending diffusion and the diffusion aftereffect”, Sov. Phys. Usp, Vol.29, pp.467-473(1986). 11.J. D. Bernal, “The complex structure of copper-tin intermetallc compounds”, Nature, Vol.122, pp.54-54(1928). 12.K. N. Tu, “Interdiffusion and reaction in bimetallic Cu-Sn thin films”, Acta Metallurgica, Vol.21, pp.347-354(1973). 13.P. L. Brook, E. Gillam, “The -phase in the Cu-Sn system”, Acta Metall, Vol.18, pp.1181-1185(1970). 14.J. Görlich, G. Schmitz, K. N. Tu, “On the mechanism of the binary Cu/Sn solder reaction”, Jounral of applied physics letters, Vol.86, 053106-1~3(2005). 15.H. K. Kim, H. K. Liou, K. N. Tu, “Morphology of instability of wetting tips of eutectic SnPb, and pure Sn on Cu” J. Mater.Res., Vol.10, pp.497-504(1995). 16.J. Y. Snog, Jin. Yu, T. Y. Lee, “Effects of reactive diffusion on stress evolution in Cu–Sn films”, Scripta Meterialia, Vol.51, pp.167-170(2004). 17.K. N. Tu, R. D. Thompson, “Kinetics of interfacial reaction in bimetallic Cu-Sn thin films”, Acta metal, Vol.30, pp.947-952(1982). 18.H. C. Bhedwar, K. K. Ray, S. D. Kulkarni, v. Balasubramanian, “Kirkendall effect studied in copper-tin diffusion couples”, Scripta Metallurgica, Vol.6, pp.919-922(1972). 19.Kejun Zeng, Roger Stierman, Tz-Cheng Chiu, Darvin Edwards, Kazuaki Ano, K. N. Tu, “ Kirkendall void formation in eutectic SnPb solder joints on bare Cu and its effect on joint reliability” , J. Appl Phys, Vol.97,024508-1~8(2005) . 20.J. Y. Huh, S. J. Moon,”Effect of elastic stresses on solid-state amorphization of Zr/Co mutilayers”, Thin Solid Films, Vol.377-378, pp.611-616(2000). 21.R. J. Jaccodine, T. J. Delph, “Stress effect in the oxidation of planar silicon substrate”, J. Appl Phys, Vol.74, pp.1981-1983(1999). 22.T. Takenaka , S. Kano, M. Kajihara, N. Kurokawa , K. Sakamoto, “Growth behavior of compound layers in Sn/Cu/Sn diffusion couples during annealing at 433–473K”, Materials Science and Engineering A, Vol.396, pp.115–123(2005). 23.Minoru Aoyagi, “Analysis of atomic diffusion mechanism of interconnect voiding failure caused by stress-induced migration”, J. Vac. Sci. Technol.B, Vol.24, pp.1254-1258(2006). 24.Norifumi Fujimura, Shoji Tachibana, Taichiro, Norio Hosokawa, “Structural control of nonequilibrium WSi_2.6 thin films by external stress”, J. Appl Phys, Vol.73, pp.733-739(1993).
在微電子產品裡,製造構裝過程中銲接點的可靠度扮演著十分重要的角色。為了更加了解外加應力對銲接合金介面介金屬(intermetallic compound,IMC)層生成的影響,本研究設計四點彎矩測試法的實驗加以探討。取雙面拋光的矽晶圓濺鍍100 nm鉭作為粘著層和400 nm銅為導電層,將導電層上電鍍10 m的銅和35 m的錫作為本實驗探討的反應層,接著將電鍍完之矽晶圓切割為長2.7cm、寬0.5cm的尺寸作為實驗試片。對相同規格之試片以四點彎矩法同時進行拉伸應力、壓縮應力及不受應力三種實驗條件,放入200˚C烤爐中進行老化(aging)的測試,並於不同反應時間後取出試片,以光學顯微鏡(Optical microscope, OM)及場發射電子顯微鏡(Field Emission scanning electron microscope, FE-SEM)觀察銅、錫介金屬層在受不同應力條件下的生長情形。
其他識別: U0005-2708201010395700
Appears in Collections:精密工程研究所

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