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|標題:||Characterization of MgxZn1−xO thin films grown on sapphire substrates by metalorganic chemical vapor deposition||作者:||C.C.Wu
|關鍵字:||MgxZn1−xO;Metalorganic chemical vapor deposition;P-type;Photoluminescence;Raman scattering||出版社:||Elsevier B.V.||Project:||Thin Solid Films, Volume 519, Issue 6, Page(s) 1966-1970.||摘要:||
Wurtzite-structure MgxZn1 − xO materials with five different compositions of x from 0 to 0.14 were grown on sapphire substrates by metalorganic chemical vapor deposition. It was found that increasing Mg content in the MgxZn1 − xO not only increased the band gap energy of the film but was also beneficial to the epitaxial growth of p-type MgxZn1 − xO without using any doping sources. In addition, the combined ultraviolet photoluminescence (PL) and Raman scattering spectra were measured with PL-Raman signals obtained together, showing a blue-shift of PL band and variation of resonant Raman multi-order longitudinal optical phonon modes with an increase of Mg content.
|Appears in Collections:||材料科學與工程學系|
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