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|標題:||Hot-wire chemical vapor deposition and characterization of polycrystalline silicon thin films using a two-step growth method||作者:||Mao, Hsin-Yuan
|關鍵字:||Thin films;Chemical vapor deposition;Electron microscopy;Electrical conductivity||出版社:||Elsevier B.V.||Project:||Materials Chemistry and Physics, Volume 126, Issue 3, Page(s) 665-668.||摘要:||
A two-step growth method was proposed to reduce the amorphous incubation layer in the initial growth of polycrystalline silicon (poly-Si) films prepared by hot-wire chemical vapor deposition (HWCVD). In the two-step growth process, a thin seed layer was first grown on the glass substrate under high hydrogen dilution ratios (φ ≥ 0.9), and then a thick overlayer was subsequently deposited upon the seed layer at a lower φ value. The effect of various deposition parameters on the structural properties of poly-Si films was investigated by Raman spectroscopy and transmission electron microscopy. Moreover, the electrical properties, such as dark and photo conductivities, of poly-Si films were also measured. It was found that the Si incubation layer could be suppressed greatly in the initial growth of poly-Si with the two-step growth method. In the subsequent poly-Si film thickening, a lower φ value of the reactant gases can be applied to enhance the deposition rate. Therefore, a high-quality poly-Si film can be fabricated via a two-step growth method with a sufficient growth rate using HWCVD.
|Appears in Collections:||材料科學與工程學系|
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