Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43218
標題: Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni-P/Si(1 0 0) systems
作者: H.F.Hsu
H.Y.Chan
T.H.Chen
H.Y.Wu
S.L.Cheng
F.B.Wu
關鍵字: Nickel silicide;Phosphorous;Interface
出版社: Elsevier B.V.
Project: Applied Surface Science, Volume 257, Issue 17, Page(s) 7422-7426.
摘要: 
As metal-oxide-semiconductor field-effect transistor (MOSFET) devices are shrunk to the nanometer scale, flat shallow metal/Si electrical contacts must be formed in the source/drain region. This work demonstrates a method for the formation of epitaxial NiSi2 layers by a solid-phase reaction in Ni-P(8 nm)/Si(1 0 0) samples. The results show that the sheet resistance remained low when the samples were annealed at temperatures from 400 to 700 °C. P atoms can be regarded as diffusion barriers against the supply of Ni to the Si substrate, which caused the formation of Si-rich silicide (NiSi2) at low temperature. Furthermore, elemental P formed a stable capping layer with O, Ni and Si during the annealing process. A uniform NiSi2 layer with an atomically flat interface was formed by annealing at 700 °C because of the formation of a Si-Ni-P-O capping layer and a reduction in the total interface area.
URI: http://hdl.handle.net/11455/43218
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2011.02.108
Appears in Collections:材料科學與工程學系

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